Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Solid-state reaction of Ru powder in molten AlxBi1−x

1990 ◽  
Vol 5 (4) ◽  
pp. 746-753 ◽  
Author(s):  
R. W. Johnson ◽  
C. M. Garland
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Alloy System ◽  
Reaction Cross ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Solvent

We describe a low-temperature solid-state interdiffusion technique that allows reaction between spatially separated reacting species and its application in the Al–Ru alloy system. This technique uses a liquid-metal solvent (Bi) as a medium for the transfer of Al to the surface of Ru powder where reaction occurs with the formation of nanocrystalline AlxRu1−x product phases. X-ray diffraction measurements are used to follow the time and temperature dependence of the reaction. Cross-sectional transmission electron microscopy allows direct imaging of the growth and morphology of the AlxRu1−x product phases.

scholarly journals Microstructure and Properties of a Novel Al-Mg-Si Alloy AA 6086

Metals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 368
Author(s):  
Franc Zupanič ◽  
Matej Steinacher ◽  
Sandi Žist ◽  
Tonica Bončina
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Thermal Analysis ◽  
Transmission Electron Microscopy ◽  
Tensile Testing ◽  
Energy Dispersive Spectrometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cast Condition

In this work, we investigated a novel Al-Mg-Si alloy, which was developed from an AA 6082, in order to considerably improve the yield and tensile strengths whilst retain excellent ductility. The new alloy possesses a higher content of Si than specified by AA 6082, and, in addition, it contains copper and zirconium. The alloy was characterized in the as-cast condition, after homogenization, extrusion, and T6 heat treatment using light microscopy, scanning and transmission electron microscopy with energy dispersive spectrometry, X-ray diffraction, differential thermal analysis and tensile testing. After T6 temper, tensile strengths were around 490 MPa with more than 10% elongation at fracture. The microstructure consisted of small-grained Al-rich matrix with α-AlMnSi and Al3Zr dispersoids, and Q′-AlCuMgSi and β-Mg2Si-type precipitates.

Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Genut ◽  
M. Eizenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Metal Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Crystal Gaas

ABSTRACTModifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.

Interfacial Reactions of Nickel films on GaAs

1983 ◽  
Vol 31 ◽  
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gaas Substrate ◽  
Isothermal Annealing ◽  
Morphological Structure ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

ABSTRACTTransmission electron microscopy (TEM) and X-ray diffraction (XRD) were performed to study the interfacial reactions of Ni/GaAs contact system as a result of isothermal annealing and two step annealing. Ni2GaAs was observed to exhibit preferred orientation relationships with respect to GaAs substrate after 300–350°C annealing. The compound decomposed to NiAs and Ga-compounds after 400°C annealing. NiAs was also found to grow preferentially on GaAs. The step annealing was found to be ineffective in varying the morphological structure of interface.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

scholarly journals Quartz Crystallite Size and Moganite Content as Indicators of the Mineralogical Maturity of the Carboniferous Chert: The Case of Cherts from Eastern Asturias (Spain)

Minerals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 611
Author(s):  
Celia Marcos ◽  
María de Uribe-Zorita ◽  
Pedro Álvarez-Lloret ◽  
Alaa Adawy ◽  
Patricia Fernández ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallite Size ◽  
Archaeological Sites ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Infrared And Raman Spectroscopy ◽  
First Time ◽  
Geological Formations

Chert samples from different coastal and inland outcrops in the Eastern Asturias (Spain) were mineralogically investigated for the first time for archaeological purposes. X-ray diffraction, X-ray fluorescence, transmission electron microscopy, infrared and Raman spectroscopy and total organic carbon techniques were used. The low content of moganite, since its detection by X-ray diffraction is practically imperceptible, and the crystallite size (over 1000 Å) of the quartz in these cherts would be indicative of its maturity and could potentially be used for dating chert-tools recovered from archaeological sites. Also, this information can constitute essential data to differentiate the cherts and compare them with those used in archaeological tools. However, neither composition nor crystallite size would allow distinguishing between coastal and inland chert outcrops belonging to the same geological formations.

Multi-scale Investigation of Heterogeneous Swift Heavy Ion Tracks in Stannate Pyrochlore

2021 ◽  
Author(s):  
Eric O'Quinn ◽  
Cameron Tracy ◽  
William F. Cureton ◽  
Ritesh Sachan ◽  
Joerg C. Neuefeind ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Modifications ◽  
Multi Scale ◽  
Ion Tracks ◽  
Swift Heavy Ion ◽  
Transmission Electron

Er2Sn2O7 pyrochlore was irradiated with swift heavy Au ions (2.2 GeV), and the induced structural modifications were systematically examined using complementary characterization techniques including transmission electron microscopy (TEM), X-ray diffraction...

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