A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

2021 ◽  
Author(s):  
Sadhana Subhadarshini Mohanty ◽  
Pradipta Dutta ◽  
Jitendra Kumar Das
Keyword(s):  
Field Effect ◽  
Wave Equations ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Dual Gate ◽  
Transistor Model ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

2013 ◽  
Vol 52 (4R) ◽  
pp. 044303 ◽  
Author(s):  
Ning Cui ◽  
Libin Liu ◽  
Qian Xie ◽  
Zhen Tan ◽  
Renrong Liang ◽  
...  
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

2018 ◽  
Vol 10 (46) ◽  
pp. 40212-40218 ◽  
Author(s):  
Gwang Hyuk Shin ◽  
Bondae Koo ◽  
Hamin Park ◽  
Youngjun Woo ◽  
Jae Eun Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Boosting on Current Using Various Source Material for Dual Gate Tunnel Field Effect Transistor

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Priyadarshini N D ◽  
Nayana G H ◽  
P Vimala
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Source Material ◽  
Oxide Semiconductor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Tunnel Field Effect Transistors (TFET) have demonstrated to have likely applications in the cutting-edge low force and super low force semiconductors to substitute the conventional FETs. TFET will be able to provide steep inverse subthreshold swing slope also maintaining a low leakage current, making it an essential structure for limiting the power consumption in Metal Oxide Semiconductor FETs.In this paper, we are simulating different structures of TFET by varying source material to boost the ON current of the device. The different models are designed and simulated using Silvaco TCAD simulator and transfer characteristics are studied.

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