Raman characterization before and after rapid thermal annealing of CeO2
 thin films grown by rf sputtering on (111) Si

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

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Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

MRS Proceedings ◽

10.1557/proc-546-27 ◽

1998 ◽

Vol 546 ◽

Author(s):

Xin Zhang ◽

Tong-Yi Zhang ◽

Yitshak Zohar

Keyword(s):

Thin Films ◽

Residual Stress ◽

Stress Relaxation ◽

Residual Stresses ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Stress Evolution ◽

Before And After ◽

Polysilicon Films ◽

Compressive Residual Stresses

AbstractThe residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

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Rapid Thermal Annealing Effects on the Electrical and Structural Properties of ITO Thin Films Deposited at Room Temperature

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2013.51.9.691 ◽

2013 ◽

Vol 51 (9) ◽

pp. 691-699

Author(s):

Se-Young Choi ◽

Sung Jin Kim ◽

Kyoon Choi

Keyword(s):

Thin Films ◽

Structural Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Room Temperature ◽

Ito Thin Films ◽

Annealing Effects

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L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

Journal of the Magnetics Society of Japan ◽

10.3379/jmsjmag.27.1083 ◽

2003 ◽

Vol 27 (11) ◽

pp. 1083-1086 ◽

Cited By ~ 5

Author(s):

H. Ito ◽

T. Kusunoki ◽

H. Saito ◽

S. Ishio

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Fept Thin Films

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Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abb7f1 ◽

2020 ◽

Vol 59 (10) ◽

pp. 105503

Author(s):

Wafaa Magdy ◽

Ayaka Kanai ◽

F. A. Mahmoud ◽

E. T. El Shenawy ◽

S. A. Khairy ◽

...

Keyword(s):

Thin Films ◽

Solar Cell ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Solar Cell Application

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Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.4220 ◽

1996 ◽

Vol 35 (Part 1, No. 8) ◽

pp. 4220-4224 ◽

Cited By ~ 8

Author(s):

M. D. Kim ◽

T. W. Kang ◽

M. S. Han ◽

T. W. Kim

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Effects

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Rapid Thermal Transformation of A-15 Crystal Structure Metallic Thin Films

MRS Proceedings ◽

10.1557/proc-387-377 ◽

1995 ◽

Vol 387 ◽

Cited By ~ 2

Author(s):

M. J. O'Keefe ◽

C. L. Cerny

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Physical Vapor Deposition ◽

Thermal Transformation ◽

The Body ◽

Cubic Phase ◽

Body Centered Cubic ◽

Body Center Cubic

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.

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