Investigation on temperature stability of MEMS silicon‐based sixth‐order stripline filter

2021 ◽  
Author(s):  
Shaohui Xiao ◽  
Yongjin Huai ◽  
Wen Ou ◽  
Jingjie Liu ◽  
Yi Ou
Keyword(s):  
Temperature Stability ◽  
Sixth Order ◽  
Silicon Based

High Temperature Oxidation and Corrosion of Silicon-Based Non-Oxide Ceramics

1999 ◽  
Vol 122 (1) ◽  
pp. 13-18 ◽  
Author(s):  
H. Klemm ◽  
M. Herrmann ◽  
C. Schubert
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Microstructural Analysis ◽  
Temperature Stability ◽  
Ambient Air ◽  
High Temperature Stability ◽  
Temperature Oxidation ◽  
Sic Ceramics ◽  
Silicon Based

The present study is focussed on the oxidation behavior of nonoxide silicon-based ceramics. Various Si3N4 and SiC ceramics were examined after long term oxidation tests (up to 5000 h) at 1500°C in ambient air. The damage mechanisms were discussed on the basis of a comprehensive chemical and microstructural analysis of the materials after the oxidation tests. The diffusion of oxygen into the material and its further reaction in the bulk of the material were found to be the most critical factors during long term oxidation treatment at elevated temperatures. However, the resulting damage in the microstructure of the materials can be significantly reduced by purposeful microstructural engineering. Using Si3N4/SiC and Si3N4/MoSi2 composite materials provides the possibility to improve the high temperature stability. [S0742-4795(00)00301-X]

Solid-state NMR investigations of the polymer route to SiBCN ceramics

2003 ◽  
Vol 81 (11) ◽  
pp. 1359-1369 ◽  
Author(s):  
Christel Gervais ◽  
Florence Babonneau ◽  
Lutz Ruwisch ◽  
Ralf Hauser ◽  
Ralf Riedel
Keyword(s):  
Solid State ◽  
Solid State Nmr ◽  
Sol Gel ◽  
Temperature Stability ◽  
Silicon Carbonitride ◽  
High Temperature Stability ◽  
Carbonitride Phase ◽  
Polymer Pyrolysis ◽  
Silicon Based ◽  
Organosilicon Polymers

Silicon based polymers obtained by ammonolysis of organochlorosilylboranes and their pyrolytic transformation into Si-B-C-N ceramics were studied by a detailed solid-state NMR investigation. Sol–gel polymerisation/pyrolysis routes were applied to form Si-B-C-N materials with exceptional high-temperature stability. The polymer to ceramic conversion was analyzed by 11B, 13C, 15N, and 29Si MAS NMR spectroscopy as well as by thermal analysis measurements coupled with mass spectroscopy (TGA–MS). The results showed that a significant change in the carbon-, silicon-, and boron-coordination environments occurs during pyrolysis. An evolution of cleavage of silcon–carbon–boron bridges and the formation of new BN3 sites was observed. The NMR data obtained suggest the presence of a rather homogeneous dispersion of the boron atoms in the as synthesized silicon carbonitride phase, supporting the high thermal stability with respect to decomposition found in these compounds.Key words: organosilicon polymers, polymer pyrolysis, SiBCN ceramics, solid-state NMR.

scholarly journals QUALITATIVE PROPERTIES FOR A SIXTH–ORDER THIN FILM EQUATION

2010 ◽  
Vol 15 (4) ◽  
pp. 457-471 ◽  
Author(s):  
Changchun Liu
Keyword(s):  
Thin Film ◽  
Weak Solutions ◽  
Approximate Solutions ◽  
Sixth Order ◽  
Classical Solutions ◽  
Qualitative Properties ◽  
Existence Of Weak Solutions ◽  
Uniform Estimates ◽  
Thin Film Equation ◽  
Silicon Based

In this article, the author studies the qualitative properties of weak solutions for a sixth‐order thin film equation, which arises in the industrial application of the isolation oxidation of silicon. Based on the Schauder type estimates, we establish the global existence of classical solutions for regularized problems. After establishing some necessary uniform estimates on the approximate solutions, we prove the existence of weak solutions. The nonnegativity and the expansion of the support of solutions are also discussed.

scholarly journals Characterization and Benchmark of a Novel Capacitive and Fluidic Inclination Sensor

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 8030
Author(s):  
Adrian Schwenck ◽  
Thomas Guenther ◽  
André Zimmermann
Keyword(s):  
Printed Circuit Boards ◽  
Temperature Stability ◽  
Allan Deviation ◽  
Circuit Boards ◽  
Bias Stability ◽  
Price Range ◽  
Measurement Results ◽  
Mems Accelerometers ◽  
Silicon Based ◽  
Molded Interconnect Devices

In this paper, a fluidic capacitive inclination sensor is presented and compared to three types of silicon-based microelectromechanical system (MEMS) accelerometers. MEMS accelerometers are commonly used for tilt measurement. They can only be manufactured by large companies with clean-room technology due to the high requirements during assembly. In contrast, the fluidic sensor can be produced by small- and medium-sized enterprises (SMEs) as well, since only surface mount technologies (SMT) are required. Three different variants of the fluidic sensor were investigated. Two variants using stacked printed circuit boards (PCBs) and one variant with 3D-molded interconnect devices (MIDs) to form the sensor element are presented. Allan deviation, non-repeatability, hysteresis, and offset temperature stability were measured to compare the sensors. Within the fluidic sensors, the PCB variant with two sensor cavities performed best regarding all the measurement results except non-repeatability. Regarding bias stability, white noise, which was determined from the Allan deviation, and hysteresis, the fluidic sensors outperformed the MEMS-based sensors. The accelerometer Analog Devices ADXL355 offers slightly better results regarding offset temperature stability and non-repeatability. The MEMS sensors Bosch BMA280 and TDK InvenSense MPU6500 do not match the performance of fluidic sensors in any category. Their advantages are the favorable price and the smaller package. From the investigations, it can be concluded that the fluidic sensor is competitive in the targeted price range, especially for applications with extended requirements regarding bias stability, noise, and hysteresis.

Temperature stability for silicon-based photonic band-gap structures

2003 ◽  
Vol 83 (10) ◽  
pp. 1980-1982 ◽  
Author(s):  
S. M. Weiss ◽  
M. Molinari ◽  
P. M. Fauchet
Keyword(s):  
Band Gap ◽  
Photonic Band Gap ◽  
Temperature Stability ◽  
Photonic Band Gap Structures ◽  
Silicon Based ◽  
Photonic Band

scholarly journals High Temperature Oxidation and Corrosion of Silicon-Based Nonoxide Ceramics

1998 ◽  
Author(s):  
Hagen Klemm ◽  
Mathias Herrmann ◽  
Christian Schubert
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Microstructural Analysis ◽  
Temperature Stability ◽  
Ambient Air ◽  
High Temperature Stability ◽  
Temperature Oxidation ◽  
Nonoxide Ceramics ◽  
Silicon Based

The present study is focussed on the oxidation behavior of nonoxide silicon-based ceramics. Various Si3N4 and SiC ceramics were examined after long term oxidation tests (up to 5000 h) at 1500°C in ambient air. The damage mechanisms were discussed on the basis of a comprehensive chemical and microstructural analysis of the materials after the oxidation tests. The diffusion of oxygen into the material and its further reaction in the bulk of the material were found to be the most critical factors during long term oxidation treatment at elevated temperatures. However, the resulting damage in the microstructure of the materials can be significantly reduced by purposeful microstructural engineering. Using Si3N4/SiC and Si3N4/MoSi2 composite materials provides the possibility to improve the high temperature stability.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Sign in / Sign up

Export Citation Format

Share Document