Study on the influence of electron angular distribution on mask pattern damage in plasma etching

2020 ◽  
Vol 17 (7) ◽  
pp. 2000014
Author(s):  
Peng Zhang ◽  
Lidan Zhang ◽  
Lan Xu
Keyword(s):  
Angular Distribution ◽  
Plasma Etching ◽  
Mask Pattern

Effects of Mask Pattern Geometry on Plasma Etching Profiles

2009 ◽  
Vol 48 (9) ◽  
pp. 096001 ◽  
Author(s):  
Hiroshi Fukumoto ◽  
Koji Eriguchi ◽  
Kouichi Ono
Keyword(s):  
Plasma Etching ◽  
Mask Pattern

Competitive effect between roughness and mask pattern on charging phenomena during plasma etching

2022 ◽  
Author(s):  
Peng Zhang ◽  
Ruvarashe Dambire
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Classical Particle ◽  
Particle Dynamic ◽  
Mask Pattern ◽  
Competitive Effect ◽  
Hexagonal Array ◽  
Dynamic Simulations ◽  
Surface Charging ◽  
Two Factors

Abstract In plasma etching process, the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of charging effect. The competitive effect between these two factors has been investigated, focusing on the surface charging in a hexagonal array, with various values of roughness parameters (amplitude (A) and wavelength (W)) and distances between holes (L). A series of classical particle dynamic simulations of surface charging, surface etching and profile evolution were used to investigate the effect of roughness and pattern on charging. This study showed that various roughness and patterns (represented by different values of L) can significantly influence surface distributions of the electric-field (E-field) and the etching rates on the mask surface. The simulations also showed that (1) the shape of the pattern array influences the mask hole profile during etching process, i.e. a hexagonal array pattern tends to deform the profile of a circular mask hole into a hexagonal hole; (2) pattern roughness is aggravated during etching process. These factors were found to be significant only at a small feature pitch and may be ignored at a large feature pitch. Possible mechanisms of these results during etching process are discussed. This work sheds light on the ways to maintain pattern integrity and further improve the quality of the pattern transfer onto the substrate.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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