Characterization of Heavily Boron-Doped a-Si:H Films Deposited at Low Substrate Temperatures

1987 ◽  
Vol 95 ◽  
Author(s):  
Jin Jang ◽  
Sung Chul Kim ◽  
Dae Bong Lee ◽  
Choochon Lee
Keyword(s):  
Gas Phase ◽  
Doping Concentration ◽  
Electrical And Optical Properties ◽  
Optical Gap ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures ◽  
Absorption Tail ◽  
Film Change

AbstractThe electrical and optical properties of heavily boron-doped hydrogenated amorphous silicon (a-Si:H) films deposited at 100°C with a gas phase doping concentration between B2H6/SiH4=0.001 and 0.1 have been investigated. The absorption edge exhibits the characteristic Urbach form and the width of exponential absorption tail, Eo, increases with increasing doping concentration. The optical gap has a linear relationship with the Eo and it is expected to be 2.20 eV when the Eo is zero. Thus, the disorder determines the optical gap directly whether the sample is doped or undoped, the hydrogen and boron in the film change the disorder. The conversion efficiency of n-i-p cell is improved by 15% if the p-layer is deposited at 100°C after preparing the n- and i-layers ∼250°C.

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

a-SiC:H Doped with Reactive Gases and with Ion Implantation

1991 ◽  
Vol 219 ◽  
Author(s):  
F. Demichelis ◽  
C. F. Pirri ◽  
E. Tresso ◽  
G. Della Mea ◽  
V. Rigato ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gas Phase ◽  
Structural Characterization ◽  
Film Growth ◽  
Implantation Technique ◽  
Boron Doped ◽  
Order Of Magnitude ◽  
Compositional Disorder ◽  
Reactive Gases

ABSTRACTBoron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals

2018 ◽  
Vol 215 (23) ◽  
pp. 1800531 ◽  
Author(s):  
Jie Xu ◽  
Dongke Li ◽  
Deyuan Chen ◽  
Wei Li ◽  
Jun Xu
Keyword(s):  
Doping Concentration ◽  
Boron Doped ◽  
Si Nanocrystals ◽  
Nanoscale Characterization

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
D. E. Sweenor ◽  
S. K. O'Leary ◽  
B. E. Foutz
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Empirical Measures ◽  
Optical Gap ◽  
Hydrogenated Amorphous ◽  
Absorption Tail ◽  
Empirical Means

AbstractThere are many different empirical means whereby the optical gap of an amorphous semiconductor may be defined. We analyze some hydrogenated amorphous silicon data with respect to a number of these empirical measures for the optical gap. By plotting these various gap measures as a function of the breadth of the optical absorption tail, we provide a means of relating these disparate measures of the optical gap. The applicability of this calibration to another set of hydrogenated amorphous silicon data is investigated.

Preparation and Characterization of Microcrystalline and Epitactially Grown Emitter Layers for Silicon Solar Cells

1998 ◽  
Vol 536 ◽  
Author(s):  
K. Lips ◽  
J. Platen ◽  
S. Brehme ◽  
S. Gall ◽  
I. Sieber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
Quartz Glass ◽  
Carrier Mobility ◽  
Doping Concentration ◽  
Electron Cyclotron Resonance ◽  
Glass Substrates ◽  
B Doping

AbstractWe have deposited thin B- and P-doped Si layers by electron cyclotron resonance CVD on c- Si (4 Ωcm, CZ) and on quartz glass substrates at T=325°C. Films grown on quartz glass are of microcrystalline nature with crystalline volume fractions of about 70 % and a resistivity ranging from 0.01 - 10 (Ωcm)−1 depending on doping concentration. The doping efficiency is close to unity with the carrier mobility being independent of doping concentration for both B- and Pdoping. Films grown on c-Si, on the other hand, exhibit perfect homoepitaxial morphology when the gas phase doping concentration exceeds 1000 ppm and 5000 ppm for P- and B-doping, respectively. The quality of the films is tested by preparing thin film emitter solar cells. We find efficiencies above 11 % for cells without ARC. The result are compared to cells with diffused emitters, otherwise prepared with the same technological steps.

scholarly journals Characterization of the electrical and optical properties of a gliding arc tornado device

2021 ◽  
Vol 75 (5) ◽  
Author(s):  
R. Barni ◽  
P. Alex ◽  
A. Salanti ◽  
C. Canevali ◽  
L. Zoia ◽  
...  
Keyword(s):  
Gas Phase ◽  
Optical Emission Spectroscopy ◽  
Polymeric Nanoparticles ◽  
Optical Emission ◽  
Electrical Characteristics ◽  
Electrical And Optical Properties ◽  
Gliding Arc ◽  
Extended Analysis ◽  
Plasma Applications

Abstract Optical emission spectroscopy was used to characterize the gas phase in a gliding arc tornado reactor used for plasma applications. Results concerning the transition between spark and fully developed arc regimes are presented, by comparing with the electrical characteristics of the discharge. An extended analysis of spectra of air and helium discharges mixed with water and hexamethyldisiloxane vapors was performed, with the identification of active radical species involved in the surface functionalization of polymeric nanoparticles. Graphic abstract

Thermal and Mechanical Properties of Diamond-Like a-C:H Films

1992 ◽  
Vol 270 ◽  
Author(s):  
G. Amato ◽  
G. Benedetto ◽  
L. Boarino ◽  
F. Demichelis ◽  
C. F. Pirri ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Carbon Films ◽  
Complete Characterization ◽  
Thermal And Mechanical Properties ◽  
Amorphous Carbon Films ◽  
Optical Gap ◽  
Hydrogenated Amorphous

ABSTRACTDiamond-like amorphous carbon and hydrogenated amorphous carbon films (DLC) prepared by rf sputtering have been characterized by means of measurements of optical gap, hardness and Young's modulus. Preliminary results of the application of the photothermal displacement technique (PTD) are also reported, confirming that this method can in principle be applied for a more complete characterization of DLC films at room temperature and low temperatures.

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