Optimizing Conditions for Formation of Local Zones for Thermomigration in Silicon

2017 ◽  
Vol 265 ◽  
pp. 839-844
Author(s):  
B.M. Seredin ◽  
V.P. Popov ◽  
A.N. Zaichenko
Keyword(s):  
Flow Rate ◽  
Protective Coating ◽  
Silicon Oxide ◽  
Defect Formation ◽  
Relative Number ◽  
Silicon Wafers ◽  
Process Temperature ◽  
Optimum Conditions ◽  
Surface Microrelief

The types of defects occurring during the formation of local zones on the surface of silicon wafers have been established. The dependences of defect formation on the surface from the surface microrelief, thickness of the protective coating of silicon oxide, process temperature, flow rate of the melt, the height of the melt, and the concentration of gallium additives in the aluminum have been determined. The optimum conditions of the process of zones formation have been revealed, and the total relative number of all types of defects has been significantly reduced.

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

The Effect of Oxide Trenches on Defect Formation and Evolution in Ion-Implanted Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
Nina Burbure ◽  
Kevin S. Jones
Keyword(s):  
Silicon Oxide ◽  
Defect Formation ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Oxide Interface ◽  
Cross Sectional ◽  
Patterned Wafers ◽  
Edge Defects ◽  
Formation And Evolution ◽  
Spike Anneal

ABSTRACTPattern induced defects during advanced CMOS processing can lead to lower quality devices with high leakage currents. Within this study, the effects of oxide trenches on implant related defect formation and evolution in silicon patterned wafers is examined. Oxide filled trenches approximately 4000Å deep were patterned into 300 mm <100> silicon wafers. Patterning was followed by ion implantation of Si+ at energies ranging from 10 to 80 keV. Samples were amorphized with doses of 1×1015 atoms/cm2, 5×1015 atoms/cm2, and 1×1016 atoms/cm2. Two independent repeating structures were studied. The first structure is comprised of silicon oxide filled trench lines, 3.7μm wide spaced 12.5μm apart, while the second structure contains silicon squares, 0.6μm on a side, surrounded by a silicon oxide filled trench. Cross- sectional and planar view transmission electron microscopy (TEM) samples were used to examine the defect morphology after annealing at temperatures ranging from 700°C to 950°C and at times between 1 second and 1 minute. Following complete regrowth, an array of defects was observed to form near the surface at the silicon/silicon oxide interface. These trench edge defects appeared to nucleate at the amorphous-crystalline interface for all energies and doses studied. Upon a spike anneal at 700°C, it was observed that regrowth of the amorphous layer had completed except in the region near the trench edge. Thus, it is believed that this defect results from the pinning of the amorphous-crystalline interface along the trench edge during solid phase epitaxial regrowth (SPER).

Optimization of photocatalytic degradation of real textile dye house wastewater by response surface methodology

2016 ◽  
Vol 74 (9) ◽  
pp. 1999-2009 ◽  
Author(s):  
Sayed Mohammad Bagher Hosseini ◽  
Narges Fallah ◽  
Sayed Javid Royaee
Keyword(s):  
Response Surface Methodology ◽  
Response Surface ◽  
Flow Rate ◽  
Advanced Oxidation Process ◽  
Influential Factor ◽  
P Value ◽  
Textile Dye ◽  
Optimum Conditions ◽  
Effective Parameters ◽  
Initial Ph

This study evaluates the advanced oxidation process for decolorization of real textile dyeing wastewater containing azo and disperse dye by TiO2 and UV radiation. Among effective parameters on the photocatalytic process, effects of three operational parameters (TiO2 concentration, initial pH and aeration flow rate) were examined with response surface methodology. The F-value (136.75) and p-value &lt;0.0001 imply that the model is significant. The ‘Pred R-Squared’ of 0.95 is in reasonable agreement with the ‘Adj R-Squared’ of 0.98, which confirms the adaptability of this model. From the quadratic models developed for degradation and subsequent analysis of variance (ANOVA) test using Design Expert software, the concentration of catalyst was found to be the most influential factor, while all the other factors were also significant. To achieve maximum dye removal, optimum conditions were found at TiO2 concentration of 3 g L−1, initial pH of 7 and aeration flow rate of 1.50 L min−1. Under the conditions stated, the percentages of dye and chemical oxygen demand removal were 98.50% and 91.50%, respectively. Furthermore, the mineralization test showed that total organic compounds removal was 91.50% during optimum conditions.

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

2020 ◽  
pp. 2000587
Author(s):  
Rabin Basnet ◽  
Hang Sio ◽  
Manjula Siriwardhana ◽  
Fiacre E. Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Defect Formation ◽  
Silicon Wafers ◽  
Thermal Donor ◽  
Donor Formation

Protective Coating Based on Organic Silicon Polymer of Ladder Structure Nanostructured with Alkoxysilane

2020 ◽  
Vol 992 ◽  
pp. 580-584
Author(s):  
V.Yu. Chukhlanov ◽  
O.G. Selivanov ◽  
N.V. Chukhlanova
Keyword(s):  
Atomic Force Microscopy ◽  
Physical Properties ◽  
Protective Coating ◽  
Silicon Oxide ◽  
Polymer Composition ◽  
Orthosilicic Acid ◽  
Force Microscopy ◽  
Atomic Force ◽  
Destruction Kinetics ◽  
The Impact

New materials based on oligooxidridsilmethylensiloxysilane nanostructured with ethyl ester of orthosilicic acid – tetraethoxysilane have been studied in the research. Tetraethoxysilane introduction into the composition is supposed to cause its decomposition up to nanoparticles of silicon oxide. The alkoxysilane hydrolytic destruction kinetics and the impact of the composition and nature of the polymer composition components on the physical properties have been studied. Atomic force microscopy was used to study the structurization kinetics of the polymer composition. The composition hydrophobicity was determined by the edge wetting angle. To study the adhesion characteristics of the obtained material, the method of disc separation from the substrate has been used. The relative rigidity has been determined by a pendulum device M3. Atomic force microscopy revealed the presence of nanoscale neoplasms (at average of one hundred twenty per one square micrometer) in diameter from two to five nanometers in the surface structure of the composition, modified with tetraethoxysilane. Herewith the physical properties of the material change: rigidity increases, the edge angle of wetting increases as well. The studied nanostructured compositions can also be applied. For example – they can be used as a protective coating with a set of special properties, such as high hydrophobicity.

A Study on Process Parameters for Plasma Pre-Treatment of Cotton Fiber Prior to Titanium Dioxide Wrinkle-Resistant Treatment

2012 ◽  
Vol 441 ◽  
pp. 239-243
Author(s):  
Y.L. Lam ◽  
C.W. Kan ◽  
C.W.M. Yuen
Keyword(s):  
Titanium Dioxide ◽  
Process Parameters ◽  
Flow Rate ◽  
Cotton Fiber ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Optimum Conditions ◽  
Substrate Distance ◽  
Pre Treatment ◽  
Treatment Speed

Titanium dioxide (TiO2) has been found feasible to improve wrinkle resistant property of cotton fiber. In this study, the performance of TiO2 wrinkle resistant treatment was further enhanced by plasma pre-treatment compared with the conventional wet treatment. Different plasma pre-treatment process parameters (treatment speed, i.e. treatment time; oxygen flow rate; and jet-to-substrate distance) were used for determining the optimum conditions (of plasma pre-treatment) for the subsequent wrinkle resistant treatment with TiO2. The optimum conditions for plasma pre-treatment of cotton fabrics before TiO2 treatment were obtained through the orthogonal array testing strategy (OATS): 10mm/s treatment speed, 0.3L/min oxygen flow rate and 6mm jet-to-substrate distance. This was found to be the most effective combination of plasma pre-treatment conditions for improving wrinkle resistant property of cotton fiber. After plasma, if the cotton fiber was treated with 0.1% TiO2, the wrinkle resistant property was further enhanced. Based on the OATS analysis, not only the optimum conditions for plasma pre-treatment could be obtained, but the level of relative importance of the three process parameters could also be obtained.

Desalination of Antioxidant Peptides from Pinctada fucata Using C18 Chromatographic Column

2013 ◽  
Vol 781-784 ◽  
pp. 1508-1512 ◽  
Author(s):  
Yan Yan Wu ◽  
Jing Wang ◽  
Lai Hao Li ◽  
Xian Qing Yang ◽  
Xiao Hu
Keyword(s):  
Antioxidant Activity ◽  
Flow Rate ◽  
Mobile Phase ◽  
Chromatographic Column ◽  
Pinctada Fucata ◽  
Dpph Radical ◽  
Optimum Conditions ◽  
Antioxidant Peptides ◽  
Crude Product ◽  
Desalination Technology

Antioxidant peptides crude product from Pinctada Fucata desalination technology by C18 chromatographic column was studied. The desalination rate and the antioxidant activity were used to analyze the effect of desalination conditions. The results show that the optimum conditions for desalting are loading 2ml of sample with concentration of 100 mg/ml, flow rate of 2 ml/min, 0.1% TFA as mobile phase with pH 6.5 in 0-4.5min and 80% methanol in 4.5-30min. Under these conditions, the desalination rate is 68.75% and the peptide recovery rate is 76.53%. The inhibitory content (IC50) expressed by antioxidant peptides is 11.421mg/ml in the system of DPPH radical.

Determination of Novel Brominated Flame Retardants in Flexible Polyurethane Foam by GC-MS

2014 ◽  
Vol 989-994 ◽  
pp. 506-510
Author(s):  
Ying Jie Chen ◽  
Pei Gang Dai ◽  
Liu Zhi Peng ◽  
Chao Du ◽  
Shang Jin Liang
Keyword(s):  
Polyurethane Foam ◽  
Flow Rate ◽  
Flame Retardants ◽  
Brominated Flame Retardants ◽  
Gas Chromatography Mass Spectrometry ◽  
Extraction Temperature ◽  
Optimum Conditions ◽  
Flexible Polyurethane Foam ◽  
Flexible Polyurethane

A method of supercritical CO2 fluid extraction gas chromatography-mass spectrometry (GC-MS) was developed for the determination of 2 novel brominated flame retardants (BB-153 and TBECH)) in flexible polyurethane foam. The optimum conditions as follows: extraction temperature: 60°C, pressure:30Mpa, CO2 mass flow rate: 8g/min ,flow rate of methanol entrainer: 3mL/min and extraction time: 60min. The calibration curves were linear in the range of 0.1~50μg/mL with correlation coefficient of 0.9995~0.9999 and detection limits (S/N=20) of 0.05μg/mL. The average recoveries of the target compounds in sample were in the range of 97.3%~98.8%(BB-153)、99.2%~105.8% (TBECH) respectively. The results showed that this method was sensitive, reliable and environmental for the determination of 2 novel brominated flame retardants (BB-153 and TBECH)) in flexible polyurethane foam.

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