HREM of artificial grain boundaries in Bi- and Tri-crystals obtained by the solid-phase intergrowth process

1994 ◽  
Vol 144 (2) ◽  
pp. 383-392 ◽  
Author(s):  
A. L. Vasiliev ◽  
E. A. Stepantsov ◽  
N. A. Kiselev
Keyword(s):  
2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Kuninori Kitahara ◽  
Toshitomo Ishii ◽  
Junki Suzuki ◽  
Takuro Bessyo ◽  
Naoki Watanabe

Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.


2013 ◽  
Vol 77 (11) ◽  
pp. 1386-1390 ◽  
Author(s):  
O. A. Kogtenkova ◽  
P. Zieba ◽  
T. Czeppe ◽  
L. Litynska-Dobrzynska ◽  
B. B. Straumal ◽  
...  
Keyword(s):  

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1515
Author(s):  
Halyna Klym ◽  
Ivan Karbovnyk ◽  
Andriy Luchechko ◽  
Yuriy Kostiv ◽  
Viktorija Pankratova ◽  
...  

BaGa2O4 ceramics doped with Eu3+ ions (1, 3 and 4 mol.%) were obtained by solid-phase sintering. The phase composition and microstructural features of ceramics were investigated using X-ray diffraction and scanning electron microscopy in comparison with energy-dispersive methods. Here, it is shown that undoped and Eu3+-doped BaGa2O4 ceramics are characterized by a developed structure of grains, grain boundaries and pores. Additional phases are mainly localized near grain boundaries creating additional defects. The evolution of defect-related extended free volumes in BaGa2O4 ceramics due to the increase in the content of Eu3+ ions was studied using the positron annihilation lifetime spectroscopy technique. It is established that the increase in the number of Eu3+ ions in the basic BaGa2O4 matrix leads to the agglomeration of free-volume defects with their subsequent fragmentation. The presence of Eu3+ ions results in the expansion of nanosized pores and an increase in their number with their future fragmentation.


Author(s):  
P. Smith ◽  
J. Narayan

Gettering of undesirable impurities from the junctions or the electrically active regions improves electrical characteristics of semiconductor devices. This removal of impurities can be accomplished either by point defects or more efficiently by line defects such as dislocations and small-angle grain boundaries. The small-angle grain boundaries containing arrays of dislocations constitute two-dimensional defects which are more effective in removing the impurities. This removal of undesirable impurities involves dislocation - impurity interaction and subsequent segregation of impurities at the dislocations. The gettering efficiency of dislocations is determined by the nature of dislocations and also by the stability of dislocation network against annealing. In previous studies, it has been shown Ar+ implantation damage is very effective in gettering undesireable impurities. However, the mechanisms of enhanced gettering by Ar+ ion damage were not clear. The purpose of this investigation was to explore the mechanism of enhanced gettering by Ar+ damage and charaterize the Ar+ damage as a function of annealing treatments.


1996 ◽  
Vol 465 ◽  
Author(s):  
David J. Wronkiewicz ◽  
Edgar C. Buck ◽  
John K. Bates

ABSTRACTThe alteration behavior of UO2 pellets following their reaction under unsaturated drip-test conditions, at 90°C, for time periods of up to 10 years has been examined by solid phase and leachate analyses. Sample reactions were characterized by preferential dissolution of grain boundaries between the original press-sintered UO2 granules comprising the samples, development of a polygonal network of open channels along the intergrain boundaries, and spallation of surface granules that had undergone severe grain boundary corrosion. The development of a dense mat of alteration phases after two years of reaction trapped loose granules, resulting in reduced rates of particulate uranium release. The paragenetic sequence of alteration phases that formed on the present samples was similar to that observed in surficial weathering zones of natural uraninite (UO2) deposits, with alkali and alkaline earth uranyl silicates representing the long-term solubility-limiting phases for uranium in both systems.


2012 ◽  
Vol 426 ◽  
pp. 101-105
Author(s):  
Hui Yang ◽  
Wen Tong Tian

The microstructure and stress variation of semisolid 7A04 alloy have been studied through unconstrictive isothermal compressing test. The results show that the relationships between true stress and true strain at different deformation temperatures and strain rates are the same, and the peak stress in the curve of true stress and true strain mainly depends on deformation temperature and strain rate. Analysis on the microstructure of compressive specimen demonstrates that segregation of liquid-solid phase is mainly affected by strain rate and deformation temperature. There are mainly two kinds of flow in liquid phase: either from the region with relatively large hydrostatic compressive stress to the region with relatively small hydrostatic compressive stress or from the grain boundaries perpendicular to the compressive axis to the grain boundaries with a certain directional angle to the compressive direction. Based on the above results, the microstructure and stress variation mainly depend on deformation temperature, strain rate and stress state.


Author(s):  
Boris S. Bokstein ◽  
Mikhail I. Mendelev ◽  
David J. Srolovitz

An interface is a surface across which the phase changes. Interfaces must be present in all heterogeneous systems, such as those discussed above. Interfacial properties necessarily differ from those of the bulk phases since the atomic bonding/structure of an interface represents a compromise between those of the phases on either side of the interface. For example, an atom at a free surface, which is an interface between a condensed phase and a gas (or a vacuum), generally has fewer neighbors with which to bond than it would have if it were in the bulk, condensed phase. In an equilibrium multi-component system, the chemical potential of each species must be the same in all phases, as well as at the interface. Not surprisingly, the chemical composition of the interface will, in general, differ from that of the bulk. For example, molecules in a gas (or solute in a condensed phase) can adsorb (segregate) onto the surface (interface) of a condensed phase. Interfacial processes play important roles in all areas of materials science and in many (most) areas of modern technology. As the trend toward miniaturization in microelectronics continues and interest in nanoscale structures grows, interfacial phenomena will become even more important. Clearly, the ratio of the number of atoms at surfaces and interfaces to those in the bulk grows as system size decreases (70% of the atoms in a nanometer diameter particle are on a surface!). Therefore, the thermodynamic properties of a system become increasingly dominated by interfacial properties as the dimensions of the system shrink. We can distinguish several types of interfaces: solid–liquid, liquid–gas, solid–gas, solid phase α–solid phase β, and grain boundaries. The meaning of the first four types of interface is self-explanatory. Grain boundaries represent a special class of interfaces; interfaces across which the phase does not change. What does change abruptly across this interface is the spatial orientation of the crystallographic axes. Most crystalline materials are polycrystalline, which means that they are composed of a large number of grains, each with a unique crystallographic orientation with respect to some laboratory frame of reference.


JETP Letters ◽  
2014 ◽  
Vol 100 (8) ◽  
pp. 535-539 ◽  
Author(s):  
B. B. Straumal ◽  
O. A. Kogtenkova ◽  
K. I. Kolesnikova ◽  
A. B. Straumal ◽  
M. F. Bulatov ◽  
...  
Keyword(s):  

2000 ◽  
Vol 652 ◽  
Author(s):  
Alexander E. Lobkovsky ◽  
James A. Warren

ABSTRACTWe present a phase field model of solidification which includes the effects of the crystalline orientation in the solid phase. This model describes grain boundaries as well as solid-liquid boundaries within a unified framework. With an appropriate choice of coupling of the phase field variable to the gradient of the crystalline orientation variable in the free energy, we find that high angle boundaries undergo a premelting transition. As the melting temperature is approached from below, low angle grain boundaries remain narrow. The width of the liquid layer at high angle grain boundaries diverges logarithmically.


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