GaN Power p‐n Diodes on HVPE GaN Substrates with Near Unity Ideality Factor and <0.5 mΩ cm 2 Specific On‐Resistance

2022 ◽  
Author(s):  
Vishank Talesara ◽  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Hongping Zhao ◽  
Wu Lu
Keyword(s):  
Ideality Factor

Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics

2021 ◽  
Vol 21 (5) ◽  
pp. 3165-3170
Author(s):  
Ashish Kumar ◽  
Arathy Varghese ◽  
Shriniwas Yadav ◽  
Mahanth Prasad ◽  
Vijay Janyani ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Ideality Factor ◽  
Indium Tin Oxide ◽  
Flexible Substrate ◽  
Copper Substrate ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Energy Storage Devices ◽  
Influence Of Temperature On ◽  
Cell Energy

The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I–V measurement has been done. The effect of operating temperature (300 K to 425 K) on I–V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C–V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.

Real reason for high ideality factor in organic solar cells: Energy disorder

Solar Energy ◽  
2019 ◽  
Vol 178 ◽  
pp. 193-200 ◽  
Author(s):  
Chunhua Xiong ◽  
Jiuxun Sun ◽  
Hongchun Yang ◽  
Hao Jiang
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Ideality Factor ◽  
Energy Disorder

scholarly journals The Optical Diode Ideality Factor Enables Fast Screening of Semiconductors for Solar Cells

Solar RRL ◽  
2018 ◽  
Vol 2 (12) ◽  
pp. 1800248 ◽  
Author(s):  
Finn Babbe ◽  
Leo Choubrac ◽  
Susanne Siebentritt
Keyword(s):  
Solar Cells ◽  
Ideality Factor ◽  
Fast Screening ◽  
Diode Ideality Factor ◽  
Optical Diode

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Sign in / Sign up

Export Citation Format

Share Document