scholarly journals 35.1: Blue-Diode Laser Annealing of Amorphous Silicon Films for Low-Cost, Large-Scale Manufacturing of Advanced Displays

2018 ◽  
Vol 49 ◽  
pp. 378-381
Author(s):  
Minok Park ◽  
Seungpyo Hong ◽  
Y.H. Jung ◽  
Suhui Lee ◽  
Yoonsoo Rho ◽  
...  
2020 ◽  
Vol 696 ◽  
pp. 137779 ◽  
Author(s):  
Minok Park ◽  
Zacharias Vangelatos ◽  
Yoonsoo Rho ◽  
H.K. Park ◽  
Jin Jang ◽  
...  

1996 ◽  
Vol 420 ◽  
Author(s):  
Florence Y. M. Chan ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
S. H. Lin ◽  
X. Y. Lin ◽  
...  

AbstractHigh rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.


2012 ◽  
Vol 43 (1) ◽  
pp. 1129-1132 ◽  
Author(s):  
Takashi Noguchi ◽  
Takuma Nishinohara ◽  
Jean de Dieu Mugiraneza ◽  
Katsuya Shirai ◽  
Tatsuya Okada ◽  
...  

2016 ◽  
Vol 37 (3) ◽  
pp. 291-294 ◽  
Author(s):  
Seonghyun Jin ◽  
Younwoo Choe ◽  
Suhui Lee ◽  
Tae-Woong Kim ◽  
Mallory Mativenga ◽  
...  

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.


2016 ◽  
Vol 17 (10) ◽  
pp. 795-800 ◽  
Author(s):  
Carlo Fornaini ◽  
Elisabetta Merigo ◽  
Jean-Paul Rocca ◽  
Giuseppe Lagori ◽  
Hélène Raybaud ◽  
...  

ABSTRACT Introduction Dental diode lasers were started to be used at the end of the 1990s and were shown to possess several important characteristics, such as small size and low cost, as well as the advantage of optic fibers delivering system. Although only two wavelengths (810 and 980 nm) had been the most used dental diode lasers, a wavelength emitting in the blue portion of the spectrum has recently been proposed. Aim The aim of this ex vivo study was to compare the effectiveness of five different fiber-delivered laser wavelengths (450, 532, 808, 1064, and 1340 nm) in the oral soft tissue ablation. Materials and methods Specimens were surgically collected from the dorsal surface of four bovine tongues and, while deep thermal increase was measured by two thermocouples at 0.5 and 2 mm depth, surface temperature was recorded by an infrared thermometer. Subsequently, specimens were fixed in 10% buffered formalin solution, cut into slices, and embedded in paraffin blocks, and a pathologist made a morphological analysis by optic microscope assigning a score based on the quality of the cut and tissue damage. Results The analysis showed the best quality of the cut and the lowest temperature increase on the specimens obtained with the shortest laser wavelength (450 nm). Conclusion Even considering this as preliminary study, the use of 450 nm blue diode laser in oral surgery may be suggested to the clinician in their daily practice. Clinical significance This study opens a new perspective in oral surgery. Blue diode laser has demonstrated a good quality of the cut with a low energy causing a minimal thermal damage to the tissue, promising a better comfort to patients. How to cite this article Fornaini C, Merigo E, Rocca J-P, Lagori G, Raybaud H, Selleri S, Cucinotta A. 450 nm Blue Laser and Oral Surgery: Preliminary ex vivo Study. J Contemp Dent Pract 2016;17(10):795-800.


2005 ◽  
Vol 475-479 ◽  
pp. 3791-3794
Author(s):  
Dong Sing Wuu ◽  
Shui Yang Lien ◽  
Jui Hao Wang ◽  
Hsin-Yuan Mao ◽  
In-Cha Hsieh ◽  
...  

One of the most challenging problems to develop polycrystalline silicon thin-film solar cells is the growth of crystalline silicon on foreign, low-cost and low-temperature substrates. In this paper, a laser doping technique was developed for the plasma-deposited amorphous silicon film. A process combination of recrystallization and dopant diffusion (phosphorous or boron) was achieved simultaneously by the laser annealing process. The doping precursor was synthesized by a sol-gel method and was spin-coated on the sample. After laser irradiation, the grain size of the doped polycrystalline silicon was examined to be about 0.5~1.0 µm. The concentrations of 2×1019 and 5× 1018 cm-3 with Hall mobilities of 92.6 and 37.5 cm²/V-s were achieved for the laser-diffused phosphorous- and boron-type polysilicon films, respectively.


2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
Nagarajan Sridhar ◽  
D. D. L. Chung ◽  
W. A. Anderson ◽  
J. Coleman

ABSTRACTThe deposition temperature of hydrogenated amorphous silicon films deposited by dc glow discharge was found to affect the photoresponse (ratio of the photo to dark conductivity) after crystallization of the film. This effect depended on the crystallization technique. For crystallization by laser annealing, the photoresponse (0.15 - 1.5) increased with increasing deposition temperature (150 - 300 °C) due to the increase in SiH and SiH2 bonding, as shown by infrared spectroscopy. For crystallization by furnace annealing (e.g. 650 °C, 50 h), the photoresponse (0.08 - 0) decreased with increasing deposition temperature (150 - 300 °C) due to the decrease in grain size and crystallinity as shown by x-ray diffraction; the complete loss in hydrogen during furnace annealing made the photoresponse low and the silicon-hydrogen bonding effect immaterial. Thus, laser crystallization at the highest deposition temperature gave the highest photoresponse.


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