29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display

2021 ◽  
Vol 52 (S2) ◽  
pp. 395-398
Author(s):  
Yukiharu Uraoka ◽  
Takanori Takahashi ◽  
Mami Fujii ◽  
J.P. Bermundo ◽  
Ryoko Miyanaga ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Mechanism ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Paper Degradation

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

scholarly journals Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1875
Author(s):  
Hwan-Seok Jeong ◽  
Hyun Seok Cha ◽  
Seong Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Hydroxyl Groups ◽  
Annealing Atmosphere ◽  
Electrical Stability ◽  
Indium Gallium

In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 °C under N2, O2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (μFE) of the N2- and O2-annealed IGTO TFTs was 26.6 cm2/V·s and 25.0 cm2/V·s, respectively; these values were higher than that of the air-annealed IGTO TFT (μFE = 23.5 cm2/V·s). Furthermore, the stability of the N2- and O2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O2- and air-annealed IGTO TFTs. The obtained results indicate that O2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.

InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors with High Mobility and High Uniformity

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Ji Hun Choi ◽  
Jong-Heon Yang ◽  
Sooji Nam ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
High Uniformity

4.1: Distinguished Paper: High Mobility Top-Gate Zinc Oxide Thin-Film Transistors (ZnO-TFTs) for Active-Matrix Liquid Crystal Displays

2006 ◽  
Vol 37 (1) ◽  
pp. 18 ◽  
Author(s):  
Takashi Hirao ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Takahiro Hiramatsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Liquid Crystal Displays ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Active Matrix ◽  
Matrix Liquid

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility

2015 ◽  
Vol 103 ◽  
pp. 173-177 ◽  
Author(s):  
Wei-Hao Tseng ◽  
Shao-Wei Fang ◽  
Chia-Yang Lu ◽  
Hung-Yang Chuang ◽  
Fan-Wei Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Nitrous Oxide ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Bias Temperature Stress

scholarly journals Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 36293-36300 ◽  
Author(s):  
Jong Beom Ko ◽  
Seung-Hee Lee ◽  
Kyung Woo Park ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Gate Structure ◽  
Top Gate Structure ◽  
Oxide Tfts

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.

Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

2015 ◽  
Vol 3 (43) ◽  
pp. 11497-11504 ◽  
Author(s):  
Y. N. Gao ◽  
Y. L. Xu ◽  
J. G. Lu ◽  
J. H. Zhang ◽  
X. F. Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Solution Processed ◽  
Hafnium Silicate ◽  
Solution Processable ◽  
Reducing Costs

Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have been systemically studied with the objective of achieving high performance and reducing costs for the next generation displays.

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film
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