A high energy resolution, high spatial resolution photoemission microscope

1990 ◽  
Vol 15 (12) ◽  
pp. 786-790 ◽  
Author(s):  
G. S. Knapp ◽  
M. Keenylside ◽  
C. Griffin
2014 ◽  
Vol 24 (03n04) ◽  
pp. 111-120 ◽  
Author(s):  
S. Toyama ◽  
S. Matsuyama ◽  
K. Ishii ◽  
A. Terakawa ◽  
K. Kasahara ◽  
...  

In this paper, we have developed a wavelength dispersive X-ray spectrometer microparticle-induced X-ray emission (WDX-[Formula: see text]-PIXE) system combining a microbeam system with high spatial resolution and wavelength dispersive X-ray (WDX) spectrometry with high-energy resolution for chemical state mapping. A Von Hamos geometry was used for the WDX system to achieve higher detection efficiency and energy resolution. The system consists of a curved crystal and a CCD camera. The WDX system was installed in a newly developed microbeam system. The energy resolution of the WDX system was 0.67 eV for [Formula: see text] (1740 eV). [Formula: see text] and [Formula: see text] X-ray spectra from various Si compounds were measured and chemical shifts related to chemical states were clearly observed. The system was applied to the chemical state analysis of clay particles. After elemental mapping of the clay particles using a conventional [Formula: see text]-PIXE system with a Si(Li) detector, particles to be analyzed were selected and analyzed sequentially with the WDX system. [Formula: see text] spectra from clay particles were obtained. The microscopic spatial distribution of elements and chemical state of the clay particles were sequentially measured with high energy and spatial resolution using a microbeam.


2012 ◽  
Vol 20 (4) ◽  
pp. 38-42 ◽  
Author(s):  
Robin Cantor ◽  
Hideo Naito

X-ray spectroscopy is a widely used and extremely sensitive analytical technique for qualitative as well as quantitative elemental analysis. Typically, high-energy-resolution X-ray spectrometers are integrated with a high-spatial-resolution scanning electron microscope (SEM) or transmission electron microscope (TEM) for X-ray microanalysis applications. The focused electron beam of the SEM or TEM excites characteristic X rays that are emitted by the sample. The integrated X-ray spectrometer can then be used to identify and quantify the elemental composition of the sample on a sub-micron length scale. This combination of energy resolution and spatial resolution makes X-ray microanalysis of great importance to the semiconductor industry.


Author(s):  
J.C.H. Spence

Any attempt to study the relationship between the electronic and atomic struc ture of isolated defects in semiconductors by high resolution electron microscopy must deal with the following difficulties: (i) The limited point reso lution of modern TEM instruments, which has fallen by about 1Å from 3.8Å to 2.8Å (with tilt) over the last decade. This is still not sufficient to resolve the individual atomic columns in any semiconductor. (ii) The fundamental difficulties in obtaining both high spatial resolution structural information and high energy resolution spectroscopic data from the same, isolated, defect. (iii) The considerable difficulties in extracting chemical, or atomic number information from electron scattering and imaging experiments with high spatial resolution. Among other problems, the separation of composition variation effects from those of thickness is an important problem. Some of our recent approaches to these problems are outlined below.


1995 ◽  
Vol 66 (2) ◽  
pp. 2072-2074 ◽  
Author(s):  
M. Bissen ◽  
M. Fisher ◽  
G. Rogers ◽  
D. Eisert ◽  
K. Kleman ◽  
...  

2017 ◽  
Vol 139 (49) ◽  
pp. 18024-18033 ◽  
Author(s):  
Rebeca G. Castillo ◽  
Rahul Banerjee ◽  
Caleb J. Allpress ◽  
Gregory T. Rohde ◽  
Eckhard Bill ◽  
...  

2007 ◽  
Vol 127 (16) ◽  
pp. 164702 ◽  
Author(s):  
Alessandro Baraldi ◽  
Erik Vesselli ◽  
Laura Bianchettin ◽  
Giovanni Comelli ◽  
Silvano Lizzit ◽  
...  

2015 ◽  
Vol 112 (52) ◽  
pp. 15803-15808 ◽  
Author(s):  
Ofer Hirsch ◽  
Kristina O. Kvashnina ◽  
Li Luo ◽  
Martin J. Süess ◽  
Pieter Glatzel ◽  
...  

The lanthanum-based materials, due to their layered structure and f-electron configuration, are relevant for electrochemical application. Particularly, La2O2CO3 shows a prominent chemoresistive response to CO2. However, surprisingly less is known about its atomic and electronic structure and electrochemically significant sites and therefore, its structure–functions relationships have yet to be established. Here we determine the position of the different constituents within the unit cell of monoclinic La2O2CO3 and use this information to interpret in situ high-energy resolution fluorescence-detected (HERFD) X-ray absorption near-edge structure (XANES) and valence-to-core X-ray emission spectroscopy (vtc XES). Compared with La(OH)3 or previously known hexagonal La2O2CO3 structures, La in the monoclinic unit cell has a much lower number of neighboring oxygen atoms, which is manifested in the whiteline broadening in XANES spectra. Such a superior sensitivity to subtle changes is given by HERFD method, which is essential for in situ studying of the interaction with CO2. Here, we study La2O2CO3-based sensors in real operando conditions at 250 °C in the presence of oxygen and water vapors. We identify that the distribution of unoccupied La d-states and occupied O p- and La d-states changes during CO2 chemoresistive sensing of La2O2CO3. The correlation between these spectroscopic findings with electrical resistance measurements leads to a more comprehensive understanding of the selective adsorption at La site and may enable the design of new materials for CO2 electrochemical applications.


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