Realizing Enhanced Thermoelectric Performance and Hardness in Icosahedral Cu 5 FeS 4− x Se x with High‐Density Twin Boundaries

Small ◽  
2021 ◽  
pp. 2104592
Author(s):  
Huan Wang ◽  
Sikang Zheng ◽  
Hong Wu ◽  
Xin Xiong ◽  
Qihong Xiong ◽  
...  
Keyword(s):  
High Density ◽  
Thermoelectric Performance ◽  
Twin Boundaries

scholarly journals Detwining in Mg alloy with a high density of twin boundaries

2014 ◽  
Vol 15 (3) ◽  
pp. 035003 ◽  
Author(s):  
Yunping Li ◽  
Yujie Cui ◽  
Huakang Bian ◽  
Shihai Sun ◽  
Ning Tang ◽  
...  
Keyword(s):  
High Density ◽  
Mg Alloy ◽  
Twin Boundaries

Nanoporous twinned PtPd with highly catalytic activity and stability

2015 ◽  
Vol 3 (5) ◽  
pp. 2050-2056 ◽  
Author(s):  
Xuefeng Zhang ◽  
Pengfei Guan ◽  
Lidija Malic ◽  
Michel Trudeau ◽  
Federico Rosei ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Catalytic Activity ◽  
Electrochemical Oxidation ◽  
High Density ◽  
Atomic Scale ◽  
High Catalytic Activity ◽  
Twin Boundaries ◽  
Oxidation Of Methanol ◽  
Overall Performance

Nanoporous composition-tunable PtPd catalysts, combining with a high density of twin boundaries and atomic-scale Pt–Pd interfaces, can be synthesized by a simple thermal-decomposition strategy. The most optimized PtPd represents the superior overall performance high catalytic activity and stability in the electrochemical oxidation of methanol.

scholarly journals Molecular Dynamics Simulation of Grain Growth in Nanocrystalline Ni

2012 ◽  
Vol 715-716 ◽  
pp. 599-604 ◽  
Author(s):  
Stephen M. Foiles
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Grain Growth ◽  
High Density ◽  
Dynamics Simulation ◽  
Square Root ◽  
Twin Boundaries ◽  
Parabolic Kinetics ◽  
Simulation Results ◽  
The Creation

Grain growth in nanocrystalline Ni has been simulated by molecular dynamics. The simulations show the creation of a high density of twin boundaries during the growth as well as the formation of vacancies consistent with recent experimental observations. The growth follows parabolic kinetics with the diameter increasing with the square root of time consistent with behavior of conventional scale metals but in disagreement with prior simulation results.

scholarly journals Selective Growth of High‐Density Anatase {101} Twin Boundaries on High‐Energy {001} Facets

2020 ◽  
Vol 1 (3) ◽  
pp. 2000025
Author(s):  
Yang Lu ◽  
Xiaolu Liu ◽  
Hongwei Liu ◽  
Yun Wang ◽  
Porun Liu ◽  
...  
Keyword(s):  
High Energy ◽  
Selective Growth ◽  
High Density ◽  
Twin Boundaries

Enhanced thermoelectric performance of higher manganese silicides by shock-induced high-density dislocations

2019 ◽  
Vol 7 (7) ◽  
pp. 3384-3390 ◽  
Author(s):  
Zhipeng Gao ◽  
Zhengwei Xiong ◽  
Jun Li ◽  
Chengjia Lu ◽  
Ganghua Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Shock Compression ◽  
Thermoelectric Materials ◽  
High Density ◽  
Thermoelectric Performance ◽  
Higher Manganese Silicides ◽  
Novel Method

The shock-compression is a novel method to generate high-density dislocations in the thermoelectric materials and to enhance their thermoelectric properties.

Carbon Nanotube-Confined Evolution of Co−Ni Alloy Nanowires with High-Density Lamellar Twin Boundaries

2008 ◽  
Vol 112 (39) ◽  
pp. 15247-15252 ◽  
Author(s):  
Shouai Feng ◽  
Jianghong Zhao ◽  
Guixiang Du ◽  
Chang Song ◽  
Jinling Song ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Density ◽  
Twin Boundaries ◽  
Ni Alloy ◽  
Alloy Nanowires ◽  
Lamellar Twin

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

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