Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon

ABSTRACTDuring the rapid thermal annealing of ion implanted layers, trapped interstitials are responsible for transient enhanced dopant diffusion and the formation of a band of defects at the mean projected ion range. We describe the detailed nature and extent of these effects and show how they can be predicted in practice. We present a model which explains why trapping only occurs with group V implantation and describe double implantation experiments which confirm the model and show how the formation of projected range defects can be suppressed.

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Investigation of ion-implanted crystals by means of directional effects in charged particle reaction yields

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1969.0097 ◽

1969 ◽

Vol 311 (1504) ◽

pp. 35-46 ◽

Cited By ~ 20

Keyword(s):

Charged Particle ◽

Orientation Dependence ◽

Experimental Procedure ◽

Crystalline Materials ◽

Projected Range ◽

Substrate Structure ◽

Short Summary ◽

Direct Explanation ◽

The Difference ◽

Ion Implanted

The paper describes a method for the study of ion-implanted crystalline materials. This method allows simultaneous investigations of the sites of the implanted atoms and of the damage of the substrate structure caused by the implantation. It is based upon the orientation dependence of charged particle reaction yields in single crystals. A short summary of the underlying theory is given, and the experimental procedure is discussed. The utility of the method is demonstrated in an investigation of implanted Fe and Si crystals. The results show a remarkable difference between Fe and Si as to the amount and distribution of the implanted ions and the damage. At a dose of 8 x 10 13 60 keV Sb ions/cm 2 , Si is completely disordered in a region corresponding to the range distribution, and the implanted ions cannot be assigned to well-defined sites. Fe is only moderately damaged after a dose of 2 x 10 16 150 keV Sn ions/cm 2 (which have about the same projected range in Fe as the 60 keV ions in Si), and ca . 85% of the implanted ions are on lattice sites. This result provides a direct explanation of the difference between implanted metallic and non-metallic Mössbauer samples.

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Universal expressions for average projected range and average damage depth in ion-implanted substrates

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(86)90248-x ◽

1986 ◽

Vol 15 (1-6) ◽

pp. 42-46 ◽

Cited By ~ 10

Author(s):

Y. Kido ◽

I. Konomi ◽

M. Kakeno ◽

K. Yamada ◽

K. Dohmae ◽

...

Keyword(s):

Projected Range ◽

Damage Depth ◽

Average Damage ◽

Ion Implanted

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Analytical electron microscopy of aluminum ion-implanted with molybdenum

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075105 ◽

1983 ◽

Vol 41 ◽

pp. 262-263

Author(s):

L. D. Stephenson ◽

J. Bentley ◽

R. B. Benson ◽

P. A. Parrish

Keyword(s):

Metastable Phase ◽

Equilibrium Phase ◽

Analytical Electron Microscopy ◽

Microstructural Characterization ◽

Equilibrium Phase Diagram ◽

Naval Research ◽

Aluminum Ion ◽

Projected Range ◽

Metastable Phase Formation ◽

Ion Implanted

The microstructures of aluminum ion-implanted with molybdenum and subjected to various heat treatments are being investigated for correlation with nearsurface properties such as corrosion. Previous work indicated enhanced corrosion resistance, but dealt chiefly with the as-implanted condition and involved little microstructural characterization. In addition, the Al-Mo binary system is of interest because metastable phase formation was considered to be possible and the equilibrium phase diagram is poorly defined. Electropolished coupons 38 × 28 × 0.5 mm of 99.999% A1 with ∽0.5 mm grain size were implanted with Mo+ ions at the Naval Research Laboratory. The dual energy implant schedule of 4.88 × 1019 ions/m2 at 50 keV plus 6.14 × 1019 ions/m2 at 110 keV resulted in a peak concentration of 4.4 at. % Mo (measured by ion backscattering) within the projected range of ∽50 nm.Disks (3 imi diam) were electrodischarge machined from as-implanted specimens and then were backthinned by electropolishing.

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Oxygen Precipitation in Oxygen-Ion Implanted Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118679 ◽

1985 ◽

Vol 43 ◽

pp. 360-361

Author(s):

R.W. Carpenter ◽

G. Vanderschaeve ◽

D. McClure

Keyword(s):

Heat Treatment ◽

Oxygen Concentration ◽

Solubility Limit ◽

Oxygen Solubility ◽

Implantation Energy ◽

Projected Range ◽

Oxygen Ion ◽

First Results ◽

Order Of Magnitude ◽

Ion Implanted

Heat treatment of oxygen-ion implanted CZ-silicon may be expected to induce precipitation of oxygen-rich precipitates when the peak total oxygen concentration is above the oxygen solubility limit, but not far enough above to result in a “buried” SiOx layer. We report here first results of an investigation of oxygen-rich precipitates formed in oxygenimplanted CZ-silicon given a multistep post-irradiation heat treatment with maximum temperatures of 1050°C. The implantation energy and dose were 400kV and 3xl015cm-2 respectively, yielding a peak oxygen concentration of 6.8x1019 cm-3 at a projected range of 1μm, based on LSS statistics. This concentration is about one order of magnitude above the oxygen solubility limit and three orders of magnitude below the stoicheometric oxide concentration.

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Projected range and damage distributions in ion‐implanted Al, Si, Al2O3, and GaAs

Journal of Applied Physics ◽

10.1063/1.335754 ◽

1985 ◽

Vol 58 (9) ◽

pp. 3377-3387 ◽

Cited By ~ 6

Author(s):

Yoshiaki Kido ◽

Junichi Kawamoto

Keyword(s):

Projected Range ◽

Ion Implanted

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Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054765 ◽

1982 ◽

Vol 40 ◽

pp. 460-461

Author(s):

P. Ling ◽

R. Gronsky ◽

J. Washburn

Keyword(s):

Electron Diffraction ◽

Ion Implantation ◽

Diffraction Analysis ◽

Diffraction Pattern ◽

Direct Consequence ◽

The Other ◽

Electron Diffraction Analysis ◽

Defect Microstructures ◽

Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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Defects in ion implanted silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109070 ◽

1978 ◽

Vol 36 (1) ◽

pp. 386-387

Author(s):

J.A. Lambert ◽

P.S. Dobson

Keyword(s):

Defect Structure ◽

Dislocation Loops ◽

Frank Loop ◽

Burgers Vector ◽

Temperature Range ◽

Perfect Dislocation ◽

Contrast Analysis ◽

Image Position ◽

Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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