Defects Engineering for Performing SrTiO3-Based Thermoelectric Thin Films: Principles and Selected Approaches

2017 ◽  
pp. 91-120 ◽  
Author(s):  
Andrei V. Kovalevsky
Keyword(s):  
Thin Films ◽  
Thermoelectric Thin Films

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

Solution-phase p-type doping of highly enriched semiconducting single-walled carbon nanotubes for thermoelectric thin films

2021 ◽  
Vol 119 (2) ◽  
pp. 023302
Author(s):  
Noah J. Stanton ◽  
Rachelle Ihly ◽  
Brenna Norton-Baker ◽  
Andrew J. Ferguson ◽  
Jeffrey L. Blackburn
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Solution Phase ◽  
Single Walled Carbon ◽  
Thermoelectric Thin Films ◽  
P Type ◽  
Walled Carbon Nanotubes

Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films

2016 ◽  
Vol 847 ◽  
pp. 143-147
Author(s):  
Ya Dan Li ◽  
Zhuang Hao Zheng ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Guang Xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Alloy Target ◽  
Diffraction Peaks ◽  
Thermoelectric Thin Films ◽  
Antimony Alloy

CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.

Electrodeposited Iron(III) Oxide (α-Fe2O3) Thermoelectric Thin Films

2016 ◽  
Vol 701 ◽  
pp. 23-27 ◽  
Author(s):  
Mohd Zuhri Shaiful Azni ◽  
Ho Kee Tan ◽  
Pei Ling Low ◽  
Nisha Kumari Devaraj ◽  
Boon Hoong Ong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Deposition Time ◽  
Deposition Potential ◽  
Electrical Conductivities ◽  
Potentiostatic Electrodeposition ◽  
Layered Growth ◽  
Time Parameters ◽  
Thermoelectric Thin Films ◽  
Deposited Films

α-Fe2O3 thermoelectric thin films were electrodeposited onto copper substrates using chloride-based electrolytes by means of potentiostatic electrodeposition. The influence of several electrodeposition parameters on the surface morphology, elemental composition and electrical conductivity of the deposited films was studied and analyzed. The deposits formed porous, wire-like morphology, with the smallest width measured to be ~60 nm. The wires tend to aggregate to form clusters, in addition to multi-layered growth of the wires. Between the parameters studied, electrolyte concentration and deposition time parameters have higher influences on the electrical conductivity of the deposited films, with the increment up to two fold higher. Deposition potential parameter offered the lowest capability to improve on the electrical conductivity in addition to the non-uniform distribution of the measured electrical conductivities. The tunable electrical conductivity is favorable for improving the performance of α-Fe2O3 films for thermoelectric applications.

Thermal Conductivity Measurement of Thermoelectric Thin Films by a Versatility-Enhanced 2ω Method

2016 ◽  
Vol 46 (5) ◽  
pp. 3089-3096 ◽  
Author(s):  
Ryo Okuhata ◽  
Kentaro Watanabe ◽  
Satoaki Ikeuchi ◽  
Akihiro Ishida ◽  
Yoshiaki Nakamura
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement ◽  
Thermoelectric Thin Films

Effects of MeV Si Ions Modification on the Thermoelectric Properties of SiO2/SiO2+Cu Multilayer Thin Films

2010 ◽  
Vol 1267 ◽  
Author(s):  
John Chacha ◽  
S. Budak ◽  
Cydale Smith ◽  
Marcus Pugh ◽  
Kudus Ogbara ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Ion Beam ◽  
Absolute Temperature ◽  
Conductivity Increase ◽  
Before And After ◽  
The Cross ◽  
Thermoelectric Thin Films

AbstractThe performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. We have prepared 100 alternating multi-nano layer of SiO2/SiO2+Cu superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed at the different fluences using the AAMU Pelletron ion beam accelerator to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric thin films before and after Si ion bombardments we have measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences.

Transferable and flexible thermoelectric thin films based on elemental tellurium with a large power factor

2018 ◽  
Vol 112 (24) ◽  
pp. 243904 ◽  
Author(s):  
Jiyang Zhou ◽  
Heao Wang ◽  
Dunren He ◽  
Yuan Zhou ◽  
Wei Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Factor ◽  
Large Power ◽  
Elemental Tellurium ◽  
Thermoelectric Thin Films ◽  
Flexible Thermoelectric
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