Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metal-Oxide-Semiconductor Devices

2007 ◽  
pp. 139-164
Author(s):  
D. Q. Kelly ◽  
J. J. -H. Chen ◽  
S. Guha ◽  
S. K. Banerjee
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
Effect Of Surface

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of
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