Incorporation of helium-implant-induced cavities near the active regions of metal–oxide–semiconductor devices: Effects on dc electrical characteristics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1445163 ◽

2002 ◽

Vol 20 (1) ◽

pp. 306 ◽

Author(s):

J. Terry ◽

L. I. Haworth ◽

A. M. Gundlach ◽

J. T. M. Stevenson ◽

V. M. Vishnyakov ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Active Regions ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metal-Oxide-Semiconductor Devices

Advanced Microelectronics - Advanced Gate Stacks for High-Mobility Semiconductors ◽

10.1007/978-3-540-71491-0_6 ◽

2007 ◽

pp. 139-164

Author(s):

D. Q. Kelly ◽

J. J. -H. Chen ◽

S. Guha ◽

S. K. Banerjee

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Effect Of Surface

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High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Applied Physics Express ◽

10.35848/1882-0786/ac23e8 ◽

2021 ◽

Author(s):

Takuji Hosoi ◽

Momoe Ohsako ◽

Takayoshi SHIMURA ◽

Heiji WATANABE

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

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Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.872 ◽

2008 ◽

Vol 47 (2) ◽

pp. 872-878 ◽

Author(s):

Chih-Feng Huang ◽

Bing-Yue Tsui ◽

Chih-Hsun Lu

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tungsten Nitride ◽

Electrical Characteristics

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Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]-Gated Metal-Oxide-Semiconductor Devices by High-Temperature Annealing

Electrochemical and Solid-State Letters ◽

10.1149/1.2337858 ◽

2006 ◽

Vol 9 (11) ◽

pp. F80 ◽

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Tien-Ko Wang

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

High Temperature Annealing

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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