Strain measurements in electronic devices by aberration-corrected HRTEM and dark-field holography

Author(s):  
F. Hüe ◽  
F. Houdellier ◽  
E. Snoeck ◽  
V. Destefanis ◽  
J. M. Hartmann ◽  
...  
2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.


Nanoscale ◽  
2019 ◽  
Vol 11 (22) ◽  
pp. 10859-10871
Author(s):  
Gyeong Hee Ryu ◽  
Jun Chen ◽  
Yi Wen ◽  
Si Zhou ◽  
Ren-Jie Chang ◽  
...  

We examine the atomic structure of chemical vapour deposition grown multilayer WS2 pyramids using aberration corrected annular dark field scanning transmission electron microscopy coupled with an in situ heating holder.


2014 ◽  
Vol 147 ◽  
pp. 70-85 ◽  
Author(s):  
E. Javon ◽  
A. Lubk ◽  
R. Cours ◽  
S. Reboh ◽  
N. Cherkashin ◽  
...  

2010 ◽  
Vol 22 (6) ◽  
pp. 2033-2040 ◽  
Author(s):  
William D. Pyrz ◽  
Douglas A. Blom ◽  
Masahiro Sadakane ◽  
Katsunori Kodato ◽  
Wataru Ueda ◽  
...  

2001 ◽  
Vol 7 (S2) ◽  
pp. 896-897
Author(s):  
O.L. Krivanek ◽  
N. Dellby ◽  
P.D. Nellist ◽  
P.E. Batson ◽  
A.R. Lupini

Surprising as it may seem, aberration correction for the scanning transmission electron microscope (STEM) is now a practical proposition. The first-ever commercial spherical aberration corrector for a STEM was delivered by Nion to IBM Research Center in June 2000, and other deliveries have taken place since or are imminent. At the same time, the development of corrector hardware and software is still proceeding at full speed, and our understanding of what are the most important factors for the successful operation of a corrector is deepening continuously.Fig. 1 shows two high-angle dark field (HADF) images of [110] Si obtained with the IBM VG HB501 STEM operating at 120 kV, about 2 weeks after we fitted a quadrupole-octupole corrector into it. Fig. 1(a) shows the best HADF image that could be obtained with the corrector's quadrupoles on but its octupoles off. Sample structures were captured down to about 2.5 Å detail, easily possible in a STEM with a high resolution objective lens with a spherical aberration coefficient (Cs) of 1.3 mm. Fig. 1(b) shows a HADF image obtained after the Cs-correcting octupoles were turned on and the corrector tuned up. The resolution has now improved to 1.36 Å. This is sufficient to resolve the correct separation of the closely-spaced Si columns.


2012 ◽  
Vol 18 (4) ◽  
pp. 656-666 ◽  
Author(s):  
Lawrence F. Allard ◽  
Steven H. Overbury ◽  
Wilbur C. Bigelow ◽  
Michael B. Katz ◽  
David P. Nackashi ◽  
...  

AbstractIn prior research, specimen holders that employ a novel MEMS-based heating technology (AduroTM) provided by Protochips Inc. (Raleigh, NC, USA) have been shown to permit sub-Ångström imaging at elevated temperatures up to 1,000°C duringin situheating experiments in modern aberration-corrected electron microscopes. The Aduro heating devices permit precise control of temperature and have the unique feature of providing both heating and cooling rates of 106°C/s. In the present work, we describe the recent development of a new specimen holder that incorporates the Aduro heating device into a “closed-cell” configuration, designed to function within the narrow (2 mm) objective lens pole piece gap of an aberration-corrected JEOL 2200FS STEM/TEM, and capable of exposing specimens to gases at pressures up to 1 atm. We show the early results of tests of this specimen holder demonstrating imaging at elevated temperatures and at pressures up to a full atmosphere, while retaining the atomic resolution performance of the microscope in high-angle annular dark-field and bright-field imaging modes.


2009 ◽  
Vol 95 (5) ◽  
pp. 053501 ◽  
Author(s):  
David Cooper ◽  
Jean-Paul Barnes ◽  
Jean-Michel Hartmann ◽  
Armand Béché ◽  
Jean-Luc Rouviere

2006 ◽  
Vol 12 (4) ◽  
pp. 285-294 ◽  
Author(s):  
Ana M. Sanchez ◽  
Pedro L. Galindo ◽  
Slawomir Kret ◽  
Meiken Falke ◽  
Richard Beanland ◽  
...  

A systematic distortion in high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM) images, which may be caused by residual electrical interference, has been evaluated. Strain mapping, using the geometric phase methodology, has been applied to images acquired in an aberration-corrected STEM. This allows this distortion to be removed and so quantitative analysis of HAADF-STEM images was enabled. The distortion is quantified by applying this technique to structurally perfect and strain-free material. As an example, the correction is used to analyse an InAs/GaAs dot-in-quantum well heterostructure grown by molecular beam epitaxy. The result is a quantitative measure of internal strain on an atomic scale. The measured internal strain field of the heterostructure can be interpreted as being due to variations of indium concentration in the quantum dot.


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