This study employed finite element analysis to simulate ultrasonic metal bump direct bonding. The stress distribution on bonding interfaces in metal bump arrays made of Al, Cu, and Ni/Pd/Au was simulated by adjusting geometrical parameters of the bumps, including the shape, size, and height; the bonding was performed with ultrasonic vibration with a frequency of 35 kHz under a force of 200 N, temperature of 200 °C, and duration of 5 s. The simulation results revealed that the maximum stress of square bumps was greater than that of round bumps. The maximum stress of little square bumps was at least 15% greater than those of little round bumps and big round bumps. An experimental demonstration was performed in which bumps were created on Si chips through Al sputtering and lithography processes. Subtractive lithography etching was the only effective process for the bonding of bumps, and Ar plasma treatment magnified the joint strength. The actual joint shear strength was positively proportional to the simulated maximum stress. Specifically, the shear strength reached 44.6 MPa in the case of ultrasonic bonding for the little Al square bumps.
Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments