Crack Formation and Selective Growth in MOVPE-GaAs on Si and its Application to OEICs

ESSDERC ’89 ◽  
1989 ◽  
pp. 397-400
Author(s):  
A. Ackaert ◽  
L. Buydens ◽  
D. Lootens ◽  
P. Van Daele ◽  
P. Demeester
Keyword(s):  
Crack Formation ◽  
Selective Growth ◽  
Gaas On Si

Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy

1988 ◽  
Vol 53 (3) ◽  
pp. 225-227 ◽  
Author(s):  
N. Chand ◽  
J. P. van der Ziel ◽  
J. S. Weiner ◽  
A. M. Sergent ◽  
A. Y. Cho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Shadow Mask ◽  
Gaas On Si

Selective growth and coalescence of GaAs on Si (001) substrates using a round-hole nanopatterned SiO2 mask

2015 ◽  
Author(s):  
Yunrui He ◽  
Jun Wang ◽  
Haiyang Hu ◽  
Qi Wang ◽  
Yongqing Huang ◽  
...  
Keyword(s):  
Selective Growth ◽  
Round Hole ◽  
Gaas On Si ◽  
Sio2 Mask

Crack formation and thermal stress relaxation of GaAs on Si growth by metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (21) ◽  
pp. 2187-2189 ◽  
Author(s):  
A. Ackaert ◽  
L. Buydens ◽  
D. Lootens ◽  
P. Van Daele ◽  
P. Demeester
Keyword(s):  
Thermal Stress ◽  
Stress Relaxation ◽  
Vapor Phase ◽  
Crack Formation ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gaas On Si ◽  
Thermal Stress Relaxation

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

EPITAXY AND DEVICE APPLICATIONS OF GaAs ON Si

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-597-C5-604
Author(s):  
JHANG W. LEE ◽  
H. SHICHIJO ◽  
L. T. TRAN
Keyword(s):  
Gaas On Si ◽  
Device Applications

Selective Growth of Self-Assembling Si and SiGe Quantum Dots

2014 ◽  
Vol E97.C (5) ◽  
pp. 393-396
Author(s):  
Katsunori MAKIHARA ◽  
Mitsuhisa IKEDA ◽  
Seiichi MIYAZAKI
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Self Assembling

Determination of the metal toughness components in impact-bending test

2018 ◽  
Vol 84 (12) ◽  
pp. 68-72
Author(s):  
A. B. Maksimov ◽  
I. P. Shevchenko ◽  
I. S. Erokhina
Keyword(s):  
Crack Growth ◽  
Specific Energy ◽  
Crack Formation ◽  
Crack Nucleation ◽  
Scale Effects ◽  
Linear Equations ◽  
Bending Test ◽  
Cross Sectional ◽  
Two Samples ◽  
Sample Width

A method for separating the work of impact into two parts - the work of the crack nucleation and that of crack growth - which consists in testing two samples with the same stress concentrators and different cross-sectional dimensions at the notch site is developed. It is assumed that the work of crack nucleation is proportional to the width of the sample face on which the crack originates and the specific energy of crack formation, whereas the work of the crack growth is proportional to the length of crack development and the specific crack growth energy. In case of the sample fracture upon testing, the crack growth length is assumed equal to the sample width. Data on the work of fracture of two samples and their geometrical dimensions at the site of the notch are used to form a system of two linear equations in two unknowns, i.e., the specific energy of crack formation and specific energy of crack growth. The determined specific energy values are then used to calculate the work of crack nucleation and work of crack growth. The use of the analytical method improves the accuracy compared to graphical - extrapolative procedures. The novelty of the method consists in using one and the same form of the notch in test samples, thus providing the same conditions of the stress-strain state for crack nucleation and growth. Moreover, specimens with different cross-section dimensions are used to eliminate the scale effects. Since the specific energy of the crack nu-cleation and specific energy of the crack growth are independent of the scale factor, they are determined only by the properties of the metal. Introduction the specific energy of crack formation and growth makes possible to assign a specific physical meaning to the fracture energy.

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