Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts

1987 ◽  
pp. 282-287
Author(s):  
P. Muret
Keyword(s):  
Interface States ◽  
Admittance Spectroscopy ◽  
Semiconductor Contacts

Admittance Spectroscopy of Interface States in $ \hbox{ZnO/HfO}_{2}$ Thin-Film Electronics

2011 ◽  
Vol 32 (12) ◽  
pp. 1713-1715 ◽  
Author(s):  
Jeffrey J. Siddiqui ◽  
Jamie D. Phillips ◽  
Kevin Leedy ◽  
Burhan Bayraktaroglu
Keyword(s):  
Thin Film ◽  
Interface States ◽  
Admittance Spectroscopy ◽  
Thin Film Electronics

Interface States at Au/Gaas Schottky Contacts

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Werner ◽  
K. Ploog
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Wide Frequency Range ◽  
Interface States ◽  
Schottky Contacts ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Trap States ◽  
Semiconductor Contacts ◽  
Transistor Model

ABSTRACTWe present a new method for the characterization of traps at the interfacial layer of metal/semiconductor contacts. The method is based on measurements of the ac-admittance of Schottky contacts over a wide frequency range. The frequency dependence is analyzed within a new Trap Transistor Model which explains the ac-behavior as well as the dc-characteristics. In particular we propose that the ac-current across the interface consists of capacitive as well as of conductive parts. We are able to deduce the density of trap states at the majority carrier Fermi level as well as the capture cross section of the traps. The model is applied to Au/GaAs-Schottky contacts. We find a weak energy dependence for the density of interface states as well as for their capture cross section within the energy range of 0.45eV to 0.57eV below the conduction band edge.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Spectroscopy of interface states in HgTe/Hg1− xCdxTe superlattices

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 1190-1194
Author(s):  
M Von Truchsess
Keyword(s):  
Interface States
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