Point Defects as Precursors of Electron-Hole Centers: Systematics and Theories of Radiation Centers in Minerals

1994 ◽  
pp. 180-197 ◽  
Author(s):  
Y. Dusausoy ◽  
J. A. Weil
1997 ◽  
Vol 482 ◽  
Author(s):  
K. P. Korona ◽  
K. Pakula ◽  
A. Wysmolek ◽  
J. M. Baranowski ◽  
J. P. Bergman ◽  
...  

AbstractIt is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.


2021 ◽  
Vol 5 (2) ◽  
pp. 140-147
Author(s):  
T.N. Nurakhmetov ◽  
Zh.M. Salikhodzha ◽  
M.Y. Dolomatov ◽  
B.N. Yussupbekova ◽  
A.M. Zhunusbekov ◽  
...  

In the present work, the emission and excitation spectra in Li2SO4-Cu crystals have been obtained by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. We have studied the nature of emission from a pressed and annealed sample of Li2SO4-Cu powders. It has been revealed that at low temperatures Cu0-SO4--centers are formed during the trap of electrons by Cu+-centers and during localization of SO4--radicals in the form of localized hole centers.


1978 ◽  
Vol 21 (11-12) ◽  
pp. 1413-1417 ◽  
Author(s):  
P.W. Hutchinson ◽  
P.S. Dobson ◽  
B. Wakefield ◽  
S. O'Hara

2005 ◽  
Vol 36 (2) ◽  
pp. 173-182
Author(s):  
M. A. Zaitoun ◽  
L. S. Bailey ◽  
J. F. Brinkley ◽  
C. M. Dickerson ◽  
C. T. Lin
Keyword(s):  
Sol Gel ◽  

2007 ◽  
Vol 06 (05) ◽  
pp. 311-314 ◽  
Author(s):  
N. G. ROMANOV ◽  
A. G. BADALYAN ◽  
D. O. TOLMACHEV ◽  
V. L. PREOBRAZHENSKI ◽  
P. G. BARANOV ◽  
...  

The recombination processes leading to tunneling afterglow and photostimulated luminescence were studied in systems based on ionic host crystals with low-dimensional structures (semiconductor quantum dots) formed as a result of the self-organized growth. The systems of AgBr nanocrystals embedded into the KBr crystal lattice and CsPbBr 3 nanocrystals embedded into the CsBr crystal lattice were investigated. The energy of electron–hole recombination in matrices was shown to transfer to quantum dots. To identify the structure of recombining electron and hole centers, magnetic resonance detected optically by monitoring the tunneling afterglow was used.


1968 ◽  
Vol 9 (2) ◽  
pp. 245-247 ◽  
Author(s):  
L. V. Bershov ◽  
M. I. Samoilovich ◽  
V. G. Lushnikov ◽  
A. N. Tarashchan

Sign in / Sign up

Export Citation Format

Share Document