scholarly journals Numerical Modeling of Electrothermal Effects in Semiconductor Devices

1993 ◽  
pp. 289-292
Author(s):  
Y. Apanovich ◽  
B. Cottle ◽  
B. Freydin ◽  
E. Lyumkis ◽  
B. Polsky ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Semiconductor Devices ◽  
Electrothermal Effects

scholarly journals Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 301-305 ◽  
Author(s):  
D. Vasileska ◽  
W. J. Gross ◽  
V. Kafedziski ◽  
D. K. Ferry
Keyword(s):  
Numerical Modeling ◽  
Numerical Solution ◽  
Diffusion Model ◽  
Semiconductor Devices ◽  
Semiconductor Technology ◽  
Electron Current ◽  
Drift Diffusion Model ◽  
Convergence Properties ◽  
Drift Diffusion ◽  
Continuity Equations

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450004 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Azer Faraclas ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Numerical Modeling ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Thermoelectric Effects ◽  
Non Volatile Memory ◽  
Bridge Structures ◽  
P Type ◽  
Electrothermal Effects ◽  
Change Memory

Phase change memory is a non-volatile memory technology that utilizes the electrical resistivity contrast between resistive amorphous and conductive crystalline phases of phase change materials. These devices operate at high current densities and high temperature gradients which lead to significant thermoelectric effects. We have performed numerical modeling of electrothermal effects in p-type Ge2Sb2Te5 phase change memory structures suspended on TiN contact pads using COMSOL Multiphysics. Temperature dependent material parameters are used in the model. Strong asymmetry is observed in temperature profiles in all cases: the hottest spot appears closer to the higher potential end suggesting that the thermal profile can be significantly altered by the thermoelectric effects during device operation. Hence, thermoelectric effects need to be considered for device designs for lower power and higher reliability devices.

Numerical modeling of magnetic-field-sensitive semiconductor devices

1985 ◽  
Vol 32 (7) ◽  
pp. 1224-1230 ◽  
Author(s):  
L. Andor ◽  
H.P. Baltes ◽  
A. Nathan ◽  
H.G. Schmidt-Weinmar
Keyword(s):  
Magnetic Field ◽  
Numerical Modeling ◽  
Semiconductor Devices

Numerical modeling of advanced semiconductor devices

1992 ◽  
Vol 36 (2) ◽  
pp. 208-232 ◽  
Author(s):  
W. Lee ◽  
S. E. Laux ◽  
M. V. Fischetti ◽  
G. Baccarani ◽  
A. Gnudi ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Semiconductor Devices

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

1990 ◽  
Vol 48 (4) ◽  
pp. 622-623
Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Ion Milling ◽  
Observation Area ◽  
Transmission Electron ◽  
Milling Machines ◽  
Resolution Imaging ◽  
Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

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