Temperature and Process Control in Rapid Thermal Processing

1996 ◽  
pp. 143-162 ◽  
Author(s):  
J.-M. Dilhac
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Commercial RTP-A SEMATECH Perspective

1996 ◽  
Vol 429 ◽  
Author(s):  
Tony Speranza ◽  
Terry Riley ◽  
Arun Nanda ◽  
Burt Fowler ◽  
Kenneth Torres ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Semiconductor Manufacturing ◽  
Rapid Thermal Processing ◽  
Component Technology ◽  
Tool Development ◽  
Productivity Improvement ◽  
The Past ◽  
Vertical Furnace ◽  
Cluster Tool

AbstractThis paper discusses various commercial aspects of Rapid Thermal Processing (RTP). It provides an overview of SEMATECH's efforts to improve the manufacturing viability of RTP. Over the past several years SEMATECH, a U.S. Government/Industry consortium, has identified thermal equipment and processing needs relating to semiconductor manufacturing. It has aggressively pursued solutions to these needs through specific equipment projects. These projects include: RTP Installed Base Productivity Improvement, 0.25um RTP Tool Development, and RTP Modeling and Component Technology. Also discussed are several thermal projects which focus on the performance of more traditional tools. A comparison between RTP and a vertical furnace with model based process control and a small batch fast ramp furnace is made. A brief discussion of an RTP gate stack cluster tool project is followed by a review of future thermal processing needs, including 300mm.

In-process control of silicide formation during rapid thermal processing

1993 ◽  
Vol 63 (1-4) ◽  
pp. 131-134 ◽  
Author(s):  
J.-M. Dilhac ◽  
C. Ganibal ◽  
N. Nolhier ◽  
P.B. Moynagh ◽  
C.P. Chew ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation

In-process control of silicide formation during rapid thermal processing

1993 ◽  
pp. 131-134
Author(s):  
J.-M. Dilhac ◽  
C. Ganibal ◽  
N. Nolhier ◽  
P.B. Moynagh ◽  
C.P. Chew ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation

In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
Mehrdad M. Moslehi ◽  
John Kuehne ◽  
Richard Yeakley ◽  
Lino Velo ◽  
Habib Najm ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Rapid Thermal Processing ◽  
Control Techniques ◽  
In Situ Fabrication ◽  
Concurrent Use ◽  
Process Uniformity

AbstractAdvanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

Rapid Thermal Processing Requirements for 0.35-µm IC Technologies and Beyond

1994 ◽  
Vol 342 ◽  
Author(s):  
Mehrdad M. Moslehi
Keyword(s):  
Process Control ◽  
Design Process ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Unit Process ◽  
The Past ◽  
Cmos Ic ◽  
Manufacturing Science

ABSTRACTThis paper will present an overview of rapid thermal processing (RTP) technologies for fastcycle-time IC production. RTP has experienced significant advances in equipment design, process control capabilities, and unit process applications over the past eight years. The Microelectronics Manufacturing Science and Technology (MMST) program at TI successfully demonstrated CMOS IC production in a single-wafer factory with all-RTP thermal fabrication for various anneals, oxidations, and chemical-vapor depositions. The use of RTP in conjunction with other single-wafer processes enabled 0.35 µm IC fabrication with a 3-day cycle time. Selected RTP equipment, sensor, and process control developments will be reviewed. The RTP applications and requirements for state-of-the-art and future IC technologies will be described.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide
Sign in / Sign up

Export Citation Format

Share Document