Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate

2018 ◽  
pp. 279-289
Author(s):  
Deepa Anand ◽  
M. Swathi ◽  
A. Purushothaman ◽  
Sundararaman Gopalan
Keyword(s):  
High Mobility ◽  
Metal Gate ◽  
High K ◽  
High K Dielectric

High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

2008 ◽  
Author(s):  
J. Oh ◽  
P. Majhi ◽  
C. Y. Kang ◽  
R. Jammy ◽  
R. Joe ◽  
...  
Keyword(s):  
High Mobility ◽  
Metal Gate ◽  
High K ◽  
High K Dielectric

EHD-jet patterned MoS2 on a high-k dielectric for high mobility in thin film transistor applications

2021 ◽  
Vol 32 (24) ◽  
pp. 245710
Author(s):  
Thi Thu Thuy Can ◽  
Hak-Lim Ko ◽  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
High Mobility ◽  
High K ◽  
High K Dielectric

Impact of TiN/HfO2 Integration on Carrier Mobility

2006 ◽  
Vol 917 ◽  
Author(s):  
Mikael Casse ◽  
Laurent Thevenod ◽  
Bernard Guillaumot ◽  
Lucie Tosti ◽  
Vincent Cosnier ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carrier Mobility ◽  
Interface Layer ◽  
Interface Roughness ◽  
Coulomb Scattering ◽  
Metal Gate ◽  
Coulombic Interactions ◽  
High K ◽  
High K Dielectric ◽  
The Impact

AbstractWe have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

2011 ◽  
Vol 88 (12) ◽  
pp. 3399-3403 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Won-Ho Choi ◽  
In-Shik Han ◽  
Min-Ki Na ◽  
Sang-Uk Park ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Metal Gate ◽  
Gate Stack ◽  
Carrier Transport Mechanism ◽  
High K ◽  
High K Dielectric

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

2013 ◽  
Vol 82 ◽  
pp. 82-85 ◽  
Author(s):  
K.S. Min ◽  
C. Park ◽  
C.Y. Kang ◽  
C.S. Park ◽  
B.J. Park ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Gate ◽  
High K ◽  
High K Dielectric ◽  
Atomic Layer Etching ◽  
High K Gate Dielectric
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