Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

2004 ◽  
Author(s):  
J. Pretet ◽  
A. Vandooren ◽  
S. Ciistoloveanu
Keyword(s):  
Metal Gate ◽  
High K ◽  
High K Dielectric

Impact of TiN/HfO2 Integration on Carrier Mobility

2006 ◽  
Vol 917 ◽  
Author(s):  
Mikael Casse ◽  
Laurent Thevenod ◽  
Bernard Guillaumot ◽  
Lucie Tosti ◽  
Vincent Cosnier ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carrier Mobility ◽  
Interface Layer ◽  
Interface Roughness ◽  
Coulomb Scattering ◽  
Metal Gate ◽  
Coulombic Interactions ◽  
High K ◽  
High K Dielectric ◽  
The Impact

AbstractWe have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

2011 ◽  
Vol 88 (12) ◽  
pp. 3399-3403 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Won-Ho Choi ◽  
In-Shik Han ◽  
Min-Ki Na ◽  
Sang-Uk Park ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Metal Gate ◽  
Gate Stack ◽  
Carrier Transport Mechanism ◽  
High K ◽  
High K Dielectric

Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-k Dielectric/Metal Gate 45 nm Bulk CMOS Technology

2013 ◽  
Vol 50 (5) ◽  
pp. 213-222
Author(s):  
C. Claeys ◽  
S. Iacovo ◽  
D. Kobayashi ◽  
A. Mercha ◽  
A. Griffoni ◽  
...  
Keyword(s):  
Statistical Evaluation ◽  
Cmos Technology ◽  
Radiation Hardness ◽  
Proton Radiation ◽  
Wafer Level ◽  
Metal Gate ◽  
High K ◽  
High K Dielectric

Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate

2011 ◽  
Vol 32 (5) ◽  
pp. 686-688 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Jung-Deuk Bok ◽  
Sang-Uk Park ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Gate ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
High K ◽  
High K Dielectric
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