Impact of TiN/HfO2 Integration on Carrier Mobility

AbstractWe have investigated the impact of a metal gate (TiN) and high-k dielectric (HfO2) on the carrier mobility. We have shown that strong remote Coulomb scattering (RCS) due to charges in the HfO2 layer (either grown by ALD or MOCVD) mostly degrades the mobility at low/medium field. High amount of charges (>1013cm-2) is needed to explain the 30% degradation observed in devices with a thin interface layer. These additional coulombic interactions are effective for bottom oxide up to 2nm. We have developed a RCS model to fully explain the experimental data. The influence of the metal gate is also evidenced. The latter has a significative impact on the Si/SiO2 interface roughness, and may induce some additional coulombic interactions.

Download Full-text

Analog Performance of SOI nMuGFETs with Different TiN Gate Electrode Thickness and High-k Dielectrics

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v6i2.345 ◽

2011 ◽

Vol 6 (2) ◽

pp. 102-106

Author(s):

Milene Galeti ◽

Michele Rodrigues ◽

Nadine Collaert ◽

Eddy Simoen ◽

Cor Claeys ◽

...

Keyword(s):

Oxide Thickness ◽

Voltage Gain ◽

Gate Electrode ◽

Metal Gate ◽

Short Channel ◽

High K ◽

Analog Performance ◽

Tin Metal ◽

High K Dielectric ◽

The Impact

This work presents an analysis of the analog performance of SOI MuGFET devices and the impact of different TiN metal gate electrode thickness.Thinner TiN metal gate allows achieving large gain and this effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. This VEA increase suggests an increase of the transversal electrical field for thin TiN metal gate (reduced gate oxide thickness) that is confirmed with the increment of the GIDL current.This impact on the voltage gain is maintained for short channel length.The impact of different gate dielectrics was also studied where high-k dielectric indicated a higher VT due to a VFB variation. Additionally, lower intrinsic voltage gain was observed for hafnium dielectric and this can be related to the lower Early voltage (VEA) present in this devices.

Download Full-text

ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156411006428 ◽

2011 ◽

Vol 20 (01) ◽

pp. 81-93

Author(s):

L. PHAM-NGUYEN ◽

C. FENOUILLET-BERANGER ◽

P. PERREAU ◽

S. DENORME ◽

G. GHIBAUDO ◽

...

Keyword(s):

Carrier Mobility ◽

Channel Length ◽

Current Status ◽

Metal Gate ◽

Fully Depleted ◽

High K ◽

Mobility Behavior ◽

The Impact ◽

Soi Technology ◽

Technological Options

SOI technology offers ample room for scaling, performance improvement, and innovations. The current status is reviewed by focusing on several technological options for boosting the transport properties in SOI MOSFETs. The impact of series resistance, high-K dielectrics, and metal gate in advanced transistors is discussed. Carrier mobility measurements as a function of channel length and temperature reveal the beneficial effect of strain, mitigated however by various types of defects. The experimental data is exclusively collected from state-of-the-art, ultrathin body, fully depleted MOSFETs. Simple models are presented to clarify the mobility behavior.

Download Full-text

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

10.21203/rs.3.rs-504559/v1 ◽

2021 ◽

Author(s):

Rishu Chaujar ◽

Mekonnen Getnet Yirak

Keyword(s):

Threshold Voltage ◽

Positive Impact ◽

Drain Current ◽

Interface Trap ◽

Metal Gate ◽

High K ◽

Current Threshold ◽

Subthreshold Voltage ◽

Output Characteristics ◽

The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

Download Full-text