BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping

2021 ◽  
pp. 81-102
Author(s):  
Souvik Mahapatra ◽  
Narendra Parihar ◽  
Nilotpal Choudhury ◽  
Nilesh Goel
1992 ◽  
Vol 19 (1-4) ◽  
pp. 477-480
Author(s):  
G. Van den Bosch ◽  
G. Groeseneken ◽  
P. Heremans ◽  
M. Heyns ◽  
H.E. Maes

Author(s):  
Ernie Kee ◽  
Fatma Yilmaz ◽  
Don Wakefield ◽  
Steve Epstein

The South Texas Project (STP) balance of plant (BOP) model for production losses has been converted from an Excel-based software application that uses minimal cutsets from a single large fault tree, to a set of small fault trees used within a risk analysis tool, Riskman® [8]. The Riskman® application provides estimates of interest to plant investors and owners such as potential production losses and plant profitability, as well as production reliability and quality (loss frequency, type of loss, loss duration and standard economic risk metrics). The BOP models and methodologies developed are applicable to both fault-tree linking and event-tree linking styles of risk analysis. The STP BOP model is developed to support configuration risk management in two categories: 1) trip risk and concomitant core damage frequency; and 2) non-trip production risk. The primary purpose for the conversion work is to make the STP BOP model framework and application platform consistent with the STP probabilistic risk assessment model. In the course of the conversion, improvements to the Riskman® software have been implemented and techniques to more efficiently produce BOP modeling (fault tree) improvements were developed. Better methods to accurately calculate initiating event frequencies are studied. New data types added to support BOP modeling are described.


2021 ◽  
pp. 59-80
Author(s):  
Souvik Mahapatra ◽  
Narendra Parihar ◽  
Subhadeep Mukhopadhyay ◽  
Nilesh Goel

2004 ◽  
Vol 14 (02) ◽  
pp. 575-580
Author(s):  
S. N. RASHKEEV ◽  
D. M. FLEETWOOD ◽  
R. D. SCHRIMPF ◽  
S. T. PANTELIDES

Two contrasting behaviors have been observed for H in Si / SiO 2 structures: a) Radiation experiments established that protons released in SiO 2 migrate to the Si / SiO 2 interface where they induce new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be protons can be cycled to and from the interface by reversing the oxide electric field. First-principles density functional calculations identify the atomic-scale mechanisms for the two types of behavior and conditions that are necessary for each. Using the results of the atomic-scale calculations we develop a model for enhanced interface-trap formation at low dose rates due to space charge effects in the base oxides of bipolar devices. We find that the hole trapping in the oxide cannot be responsible for all the Enhanced Low-Dose-Rate Sensitivity (ELDRS) effects in SiO 2, and the contribution of protons is also essential. The dynamics of interface-trap formation are defined by the relation between the proton mobility (transport time of the protons across the oxide) and the time required for positive-charge buildup near the interface due to trapped holes. The analytically estimated and numerically calculated interface-trap densities are found to be in very good agreement with available experimental data.


2016 ◽  
Vol 108 (1) ◽  
pp. 012106 ◽  
Author(s):  
Cheng-Tyng Yen ◽  
Chien-Chung Hung ◽  
Hsiang-Ting Hung ◽  
Chwan-Ying Lee ◽  
Lurng-Shehng Lee ◽  
...  

2004 ◽  
Vol 4 (4) ◽  
pp. 715-722 ◽  
Author(s):  
M. Denais ◽  
V. Huard ◽  
C. Parthasarathy ◽  
G. Ribes ◽  
F. Perrier ◽  
...  

2021 ◽  
pp. 103-125
Author(s):  
Souvik Mahapatra ◽  
Narendra Parihar ◽  
Tarun Samadder ◽  
Nilotpal Choudhury ◽  
Akshay Raj

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