Hole trapping and hot-hole induced interface trap generation in MOSFET's at different temperatures

The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all samples. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.

Download Full-text

BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping

10.1007/978-981-16-6120-4_5 ◽

2021 ◽

pp. 81-102

Author(s):

Souvik Mahapatra ◽

Narendra Parihar ◽

Nilotpal Choudhury ◽

Nilesh Goel

Keyword(s):

Interface Trap ◽

Analysis Tool ◽

Model Framework ◽

Hole Trapping

Download Full-text

Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.902883 ◽

2007 ◽

Vol 54 (9) ◽

pp. 2143-2154 ◽

Cited By ~ 198

Author(s):

A.E. Islam ◽

H. Kufluoglu ◽

D. Varghese ◽

S. Mahapatra ◽

M.A. Alam

Keyword(s):

Field Dependence ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Hole Trapping ◽

Trapping Effects

Download Full-text

HYDROGEN AT THE Si/SiO2 INTERFACE: FROM ATOMIC-SCALE CALCULATIONS TO ENGINEERING MODELS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156404002521 ◽

2004 ◽

Vol 14 (02) ◽

pp. 575-580

Author(s):

S. N. RASHKEEV ◽

D. M. FLEETWOOD ◽

R. D. SCHRIMPF ◽

S. T. PANTELIDES

Keyword(s):

Density Functional ◽

Low Dose ◽

Positive Charge ◽

Rate Sensitivity ◽

Atomic Scale ◽

Interface Trap ◽

Proton Mobility ◽

Trap Formation ◽

Hole Trapping ◽

Time Required

Two contrasting behaviors have been observed for H in Si / SiO 2 structures: a) Radiation experiments established that protons released in SiO 2 migrate to the Si / SiO 2 interface where they induce new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be protons can be cycled to and from the interface by reversing the oxide electric field. First-principles density functional calculations identify the atomic-scale mechanisms for the two types of behavior and conditions that are necessary for each. Using the results of the atomic-scale calculations we develop a model for enhanced interface-trap formation at low dose rates due to space charge effects in the base oxides of bipolar devices. We find that the hole trapping in the oxide cannot be responsible for all the Enhanced Low-Dose-Rate Sensitivity (ELDRS) effects in SiO 2, and the contribution of protons is also essential. The dynamics of interface-trap formation are defined by the relation between the proton mobility (transport time of the protons across the oxide) and the time required for positive-charge buildup near the interface due to trapped holes. The analytically estimated and numerically calculated interface-trap densities are found to be in very good agreement with available experimental data.

Download Full-text

Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Applied Physics Letters ◽

10.1063/1.4939553 ◽

2016 ◽

Vol 108 (1) ◽

pp. 012106 ◽

Cited By ~ 15

Author(s):

Cheng-Tyng Yen ◽

Chien-Chung Hung ◽

Hsiang-Ting Hung ◽

Chwan-Ying Lee ◽

Lurng-Shehng Lee ◽

...

Keyword(s):

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Hole Trapping

Download Full-text

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2004.840856 ◽

2004 ◽

Vol 4 (4) ◽

pp. 715-722 ◽

Cited By ~ 88

Author(s):

M. Denais ◽

V. Huard ◽

C. Parthasarathy ◽

G. Ribes ◽

F. Perrier ◽

...

Keyword(s):

Gate Oxide ◽

Cmos Technology ◽

Interface Trap ◽

Hole Trapping

Download Full-text

C-V AND DLTS CHARACTERIZATION OF RAPID THERMAL OXIDES ON Si0.887Ge0.113 AND Si0.8811Ge0.113C0.0059 ALLOYS

International Journal of Modern Physics B ◽

10.1142/s0217979202015091 ◽

2002 ◽

Vol 16 (28n29) ◽

pp. 4207-4210 ◽

Cited By ~ 1

Author(s):

W. FENG ◽

W. K. CHOI ◽

L. K. BERA ◽

J. MI ◽

C. Y. YANG

Keyword(s):

Deep Level Transient Spectroscopy ◽

High Temperature Oxidation ◽

Oxidation Process ◽

Deep Level ◽

Interface Trap Density ◽

Interface Trap ◽

Temperature Oxidation ◽

Different Temperatures ◽

Transient Spectroscopy

Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si 0.887 Ge 0.113 and Si 0.8811 Ge 0.113 C 0.0059 alloys. A high interface trap density (~ 1012 eV -1 cm -2) and a high apparent doping level were obtained for the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO 2/ Si 0.8811 Ge 0.113 C 0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.

Download Full-text