scholarly journals Quantum confinement effects of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique

1994 ◽  
Vol 5 (6) ◽  
pp. 370-374 ◽  
Author(s):  
T.C. Chang ◽  
C.Y. Chang ◽  
T.G. Jung ◽  
P.A. Chen ◽  
W.C. Tsai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Confinement ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Vapor Deposition Technique ◽  
Strained Layer Superlattices

Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1787-1792 ◽  
Author(s):  
Ting-Chang Chang ◽  
Chun-Yen Chang ◽  
Tz-Guei Jung ◽  
Wen-Chung Tsai ◽  
Guo-Wei Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Strained Layer ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Strained Layer Superlattices

Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

1992 ◽  
Vol 260 ◽  
Author(s):  
P. J. Wang ◽  
Chin-An Chang ◽  
B. S. Meyerson ◽  
J. O. Chu ◽  
M. J. Tejwani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Vapor Deposition Technique ◽  
Superlattice Structures

ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe. This is followed by the formation of PtGe around 300 °C. The Pt-Ge reactions are thus similar to those of Pt-Si. The reactions between Pt and SiGe, however, involve a preferential Pt-Si reaction. At 200 °C, for example, while Pt2Ge is normally seen from the Pt/Ge system, only PtzSi is detected from both x-ray diffraction and Rutherford backscattering measurements. At higher temperatures, both the PtGe and PtSi phases form. This preferential Pt-Si reaction is observed in both Pt/SiGe and Pt/Si-SiGe superlattice structures.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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