The wetting of self-bonded polycrystalline silicon carbide by silicon

1977 ◽  
Vol 16 (11) ◽  
pp. 860-862 ◽  
Author(s):  
V. L. Yupko ◽  
G. G. Gnesin ◽  
Yu. P. Dyban' ◽  
T. I. Kuz'mina ◽  
I. E. Polomoshnov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

2010 ◽  
Vol 97 (26) ◽  
pp. 262107 ◽  
Author(s):  
F. Liu ◽  
B. Hsia ◽  
C. Carraro ◽  
A. P. Pisano ◽  
R. Maboudian
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Pressure dependence of thin polycrystalline silicon carbide diaphragm resonators

2012 ◽  
Author(s):  
Andrew C. Barnes ◽  
Jaesung Lee ◽  
Patrick T. Rawlinson ◽  
Philip X.-L. Feng ◽  
Christian A. Zorman
Keyword(s):  
Silicon Carbide ◽  
Pressure Dependence ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Thin Polycrystalline

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation

Structure and electrical conductivity of polycrystalline silicon carbide

Refractories ◽  
1991 ◽  
Vol 32 (5-6) ◽  
pp. 229-233
Author(s):  
S. V. Kazakov ◽  
V. I. Kolynina ◽  
E. Ya. Litovskii ◽  
G. G. Mel'nikova ◽  
A. S. Kheifets
Keyword(s):  
Electrical Conductivity ◽  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide
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