Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

2015 ◽  
Vol 121 (3) ◽  
pp. 1271-1276 ◽  
Author(s):  
Jingtao Zhao ◽  
Zhaojun Lin ◽  
Quanyou Chen ◽  
Ming Yang ◽  
Peng Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Electrodes ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

2010 ◽  
Vol 09 (04) ◽  
pp. 263-267
Author(s):  
A. Sh. HUSSEIN ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
S. M. THAHAB
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Carrier Confinement ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Good Agreement ◽  
Mg Doped

AlGaN/GaN -based heterostructure field-effect transistors (HFETs) with and without Mg -doped semi-insulating carrier confinement layer were simulated by using ISE TCAD software, respectively. The detailed study on the electrical properties of these samples was performed. The effect of inserting Mg -doped GaN layer on the source–drain (S–D) leakage current was investigated. Higher values of drain current and extrinsic transconductance were achieved with conventional HFETs (without Mg -doped). The source-to-drain (S–D) leakage current of conventional HFETs was also higher. However, the S–D leakage current was reduced with the insertion of the Mg -doped semi-insulating carrier confinement layer. Our results are in good agreement with the experimental results obtained by other researchers.

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