ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

AlGaN/GaN -based heterostructure field-effect transistors (HFETs) with and without Mg -doped semi-insulating carrier confinement layer were simulated by using ISE TCAD software, respectively. The detailed study on the electrical properties of these samples was performed. The effect of inserting Mg -doped GaN layer on the source–drain (S–D) leakage current was investigated. Higher values of drain current and extrinsic transconductance were achieved with conventional HFETs (without Mg -doped). The source-to-drain (S–D) leakage current of conventional HFETs was also higher. However, the S–D leakage current was reduced with the insertion of the Mg -doped semi-insulating carrier confinement layer. Our results are in good agreement with the experimental results obtained by other researchers.

Download Full-text

High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator

Applied Physics Letters ◽

10.1063/1.2012535 ◽

2005 ◽

Vol 87 (7) ◽

pp. 073504 ◽

Cited By ~ 22

Author(s):

Narihiko Maeda ◽

Chengxin Wang ◽

Takatomo Enoki ◽

Toshiki Makimoto ◽

Takehiko Tawara

Keyword(s):

Leakage Current ◽

Current Density ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Insulator ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

Correlation Between Epitaxial Layer Quality and Drain Current Stability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2410345 ◽

2015 ◽

Vol 62 (5) ◽

pp. 1440-1447 ◽

Cited By ~ 8

Author(s):

Yuji Ando ◽

Isao Takenaka ◽

Hidemasa Takahashi ◽

Chiaki Sasaoka

Keyword(s):

Epitaxial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

Download Full-text

LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS

International Journal of High Speed Electronics and Systems ◽

10.1142/s012915640200137x ◽

2002 ◽

Vol 12 (02) ◽

pp. 449-458 ◽

Cited By ~ 1

Author(s):

SERGEY L. RUMYANTSEV ◽

MICHAEL S. SHUR ◽

REMIS GASKA ◽

MICHAEL. E. LEVINSHTEIN ◽

M. ASIF KHAN ◽

...

Keyword(s):

Field Effect ◽

Electron Tunneling ◽

Field Effect Transistors ◽

Low Frequency ◽

Drain Current ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Sources ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

We report on experimental study of the low frequency noise in GaN-based Field Effect Transistors. In both GaN Metal Semiconductor Field Effect Transistors (MESFETs) and AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), the main noise sources are located in the channel. Gate voltage dependence of noise in MESFETs complies with the Hooge formula and indicates the bulk origin of noise. The dependencies of the Hooge parameter, α, on sheet electron concentration ns in HFETs are extracted from measured drain current fluctuations taking into account the contact resistance, and the resistance of the ungated regions of the transistors. At low channel concentrations α is inversely proportional to ns (α ~ 1/ns). This dependence as well as the temperature dependence of noise might be explained by electron tunneling from the 2D gas into the traps in the bulk GaN or AlGaN.

Download Full-text