Design and analysis of dual-gate misalignment on the performance of dopingless tunnel field effect transistor

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
Deep Shekhar ◽  
Ashish Raman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Boosting on Current Using Various Source Material for Dual Gate Tunnel Field Effect Transistor

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Priyadarshini N D ◽  
Nayana G H ◽  
P Vimala
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Source Material ◽  
Oxide Semiconductor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Tunnel Field Effect Transistors (TFET) have demonstrated to have likely applications in the cutting-edge low force and super low force semiconductors to substitute the conventional FETs. TFET will be able to provide steep inverse subthreshold swing slope also maintaining a low leakage current, making it an essential structure for limiting the power consumption in Metal Oxide Semiconductor FETs.In this paper, we are simulating different structures of TFET by varying source material to boost the ON current of the device. The different models are designed and simulated using Silvaco TCAD simulator and transfer characteristics are studied.

Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump Phenomenon

2020 ◽  
Vol 20 (7) ◽  
pp. 4182-4187
Author(s):  
Ye Sung Kwon ◽  
Seong-Hyun Lee ◽  
Yoon Kim ◽  
Garam Kim ◽  
Jang Hyun Kim ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Control Device ◽  
Subthreshold Region ◽  
Dual Gate ◽  
Technical Issues ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

The tunnel field-effect transistor (TFET) with surrounding channel nanowire (SCNW) structure promises better performance than the conventional planar TFET in terms of subthreshold swing (SS) and on-current (ION). In spite of the advantages of SCNW TFET, there are some technical issues in the aspects of a hump phenomenon in subthreshold region and a high ambipolar current (IAMB) in off-state. In order to overcome these issues, a novel dual-gate SCNW TFET (DG-SCNW TFET) with differential gate work functions (WFs) and a gate-drain underlap is proposed and studied by using technology computer-aided design (TCAD) simulation. In addition, a hetero-junction with SiGe source is applied to improve the device performance. Finally, it is confirmed that the optimized DG-SCNW TFET shows the remarkable performance comparing with the control device.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor
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