Abstract
In this paper, a novel nanotube tunneling field-effect transistor (NT-TFET) with bias-induced electron-hole bilayer (EHBNT-TFET) is proposed for the first time. By the intentional misalignment and an asymmetric bias configuration of the inner-gate and outer-gate, the line tunneling takes place inside the channel, significantly improving the tunneling rate and area. The device principle and performance are investigated by calibrated 3-D TCAD simulations. Compared to the conventional NT-TFET, the proposed EHBNT-TFET exhibits an increased ON-state current (ION) about 57.2 times and a sub-60 mV/dec subthreshold swing for seven orders of magnitude of drain current. Furthermore, the increased ION and reduced gate capacitance achieve improved dynamic performance. Compared with conventional NT-TFET, the intrinsic delay decreased about 142 times is obtained in EHBNT-TFET.
Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer
