Compressible piezoresistive pressure sensor based on Ag nanowires wrapped conductive carbonized melamine foam

2021 ◽  
Vol 128 (1) ◽  
Author(s):  
Bin Cai ◽  
Liying Wang ◽  
Fei Yu ◽  
jianming Jia ◽  
Jialun Li ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Piezoresistive Pressure Sensor ◽  
Ag Nanowires ◽  
Melamine Foam

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

Fabrication of Ag/PDMS-TiO2 flexible piezoresistive pressure sensor

2020 ◽  
Vol 597 ◽  
pp. 412386
Author(s):  
K. Kumari ◽  
Reeshma R ◽  
D.S. ArunKumar ◽  
Sunil Meti ◽  
M.R. Rahman
Keyword(s):  
Pressure Sensor ◽  
Piezoresistive Pressure Sensor

Design of Ultra Low Temperature Pressure and Temperature Sensor Structure

2011 ◽  
Vol 80-81 ◽  
pp. 693-697
Author(s):  
Chang Hong Ji ◽  
Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Elastic Membrane ◽  
Temperature Influence ◽  
Sensor Sensitivity ◽  
Piezoresistive Pressure Sensor ◽  
Sensor Structure

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.

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