scholarly journals Quantum Mechanical Effect of Path-polarization Contextuality for a Single Photon

2010 ◽  
Vol 49 (8) ◽  
pp. 1920-1928 ◽  
Author(s):  
Alok Kumar Pan ◽  
Dipankar Home
2020 ◽  
Vol 35 (35) ◽  
pp. 2050290
Author(s):  
Mohammad A. Ganjali ◽  
Zainab Sedaghatmanesh

Gravity-induced quantum interference is an experiment that exhibits how a gravitational effect appears in quantum mechanics.1 In this famous experiment, gravity was added to the system just classically. In our study, we will do the related calculations on a gravitational wave background. We will argue that the effect of gravitational wave would be detectable in this quantum mechanical effect.


Author(s):  
P. S. Farago ◽  
R. M. Sillitto

SynopsisThe relationship between the modulation of electron beams at optical frequencies (the Schwarz-Hora effect) and at microwave frequencies is discussed. At optical frequencies the interaction between the modulating field and the electron beam must be described quantum mechanically, although the field itself may be described classically; in the microwave case the process may be described entirely classically. The interaction modifies the state functions of the individual electrons, but the observable modulation of the total electron beam results from the coherence of the modulating field. The main features of the Schwarz-Hora effect result from ‘single photon’ processes, but the beam modulation in the klystron is a ‘multi-photon’ process.The exponential decay of the depth of modulation with distance from the interaction region, observable in the optical frequency case but not in the klystron, is not an inherently quantal effect. The periodic variation of the depth of modulation with distance along the beam, observed in the optical frequency case, is an essentially quantum mechanical effect, and is different, in its origins and in its dependence on the modulation frequency, from the space-charge waves which are observed on a klystron beam.


Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 410 ◽  
Author(s):  
Jian Qin ◽  
Quanbin Zhou ◽  
Biyan Liao ◽  
Hong Wang

A comprehensive model for 2DEG characteristics of InxAl1−xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heterostructure have been carried out using solutions of coupled 1-D Schrödinger-Poisson equations solved by an improved iterative scheme. The proposed model extends a previous approach allowing for estimating the quantum mechanical effect for a generic InAlN/GaN-based HEMT within the range of the Hartree approximation. A critical AlN thickness (~2.28 nm) is predicted when considering the 2DEG density in dependence on a lattice matched In0.17Al0.83N thickness. The obtained results present in this work provide a guideline for the experimental observation of the subband structure of InAlN/GaN heterostructure and may be used as a design tool for the optimization of that epilayer structure.


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