Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing

A comprehensive investigation of antiphase domain boundaries (APB's) in GaAs-on-Si is presented. A comprehensive experimental approach, based on complementary electron microscopy (TEM and SEM) and chemical etch techniques, is developed and used in the study of the structural evolution of APB's on vicinal (001)Si substrates. The question of whether a GaAs selective nucleation or APB annihilation accounts for the absence of APB's in thick GaAs/Si films, grown on substrates misoriented from (001) toward (110), is addressed. APB's are revealed by two different TEM techniques to exist in the first interfacial layers of GaAs/Si even in samples considered to be “APB free”. The APB annihilation mechanism is illustrated in GaAs films grown on substrates misoriented toward (100), either directly, by cross-sectional TEM observations, or indirectly, by combined chemical etch/SEM experiments. In addition, the structural characteristics of APB's and their interaction with other extended crystal defects are clarified by XTEM and TEM observations. Finally, the influence of APB's on GaAs/Si surface morphology and their electrical activity are shown explicitly for the first time.

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Nucleation of Disorder in Fe3Al Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100061574 ◽

1967 ◽

Vol 25 ◽

pp. 312-313

Author(s):

P. R. Swann ◽

W. R. Duff ◽

R. M. Fisher

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Annealing Temperature ◽

Antiphase Domain ◽

Effect Of Temperature ◽

Domain Structures ◽

Transmission Electron ◽

Domain Boundaries ◽

Higher Temperature ◽

The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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Antiphase Boundaries in Ordered Ni3FE Crystals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010006221x ◽

1969 ◽

Vol 27 ◽

pp. 62-63

Author(s):

Y. H. Liu

Keyword(s):

Domain Size ◽

Antiphase Domain ◽

X Ray Diffraction ◽

X Ray ◽

Hardening Mechanism ◽

Superlattice Structure ◽

Disordered Phase ◽

Domain Boundaries ◽

Atomic Scattering ◽

The Difference

Ordered Ni3Fe crystals possess a LI2 type superlattice similar to the Cu3Au structure. The difference in slip behavior of the superlattice as compared with that of a disordered phase has been well established. Cottrell first postulated that the increase in resistance for slip in the superlattice structure is attributed to the presence of antiphase domain boundaries. Following Cottrell's domain hardening mechanism, numerous workers have proposed other refined models also involving the presence of domain boundaries. Using the anomalous X-ray diffraction technique, Davies and Stoloff have shown that the hardness of the Ni3Fe superlattice varies with the domain size. So far, no direct observation of antiphase domain boundaries in Ni3Fe has been reported. Because the atomic scattering factors of the elements in NijFe are so close, the superlattice reflections are not easily detected. Furthermore, the domain configurations in NioFe are thought to be independent of the crystallographic orientations.

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The observation of solutions in Ni3Nb

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104765 ◽

1988 ◽

Vol 46 ◽

pp. 540-541

Author(s):

Z.M. Wang ◽

J.P. Zhang

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Phase Modulation ◽

High Resolution Electron Microscopy ◽

Antiphase Domain ◽

Boundary Area ◽

Matrix Type ◽

Resolution Electron ◽

Domain Boundaries ◽

Kontorova Model

High resolution electron microscopy reveals that antiphase domain boundaries in β-Ni3Nb have a hexagonal unit cell with lattice parameters ah=aβ and ch=bβ, where aβ and bβ are of the orthogonal β matrix. (See Figure 1.) Some of these boundaries can creep “upstairs” leaving an incoherent area, as shown in region P. When the stepped boundaries meet each other, they do not lose their own character. Our consideration in this work is to estimate the influnce of the natural misfit δ{(ab-aβ)/aβ≠0}. Defining the displacement field at the boundary as a phase modulation Φ(x), following the Frenkel-Kontorova model [2], we consider the boundary area to be made up of a two unit chain, the upper portion of which can move and the lower portion of the β matrix type, assumed to be fixed. (See the schematic pattern in Figure 2(a)).

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Robust long-range magnetic correlation across antiphase domain boundaries in Sr2CrReO6

Physical Review B ◽

10.1103/physrevb.103.064410 ◽

2021 ◽

Vol 103 (6) ◽

Author(s):

Bo Yuan ◽

Subin Kim ◽

Sae Hwan Chun ◽

Wentao Jin ◽

C. S. Nelson ◽

...

Keyword(s):

Long Range ◽

Antiphase Domain ◽

Magnetic Correlation ◽

Domain Boundaries

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Deformation of crystal surfaces in ferroelastic materials caused by antiphase domain boundaries

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/9/22/010 ◽

1997 ◽

Vol 9 (22) ◽

pp. 4583-4592 ◽

Cited By ~ 10

Author(s):

I Rychetský

Keyword(s):

Antiphase Domain ◽

Crystal Surfaces ◽

Domain Boundaries

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The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH 4 or SiH 2 Cl 2 on Si(100)-(2×1)

Applied Physics A ◽

10.1007/s003390051289 ◽

1998 ◽

Vol 66 (7) ◽

pp. S1025-S1029 ◽

Cited By ~ 2

Author(s):

J. Spitzmüller ◽

M. Fehrenbacher ◽

F. Haug ◽

H. Rauscher ◽

R.J. Behm

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Antiphase Domain ◽

Domain Boundaries ◽

Si Epitaxy

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MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

MRS Proceedings ◽

10.1557/proc-220-265 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 3

Author(s):

J. B. Posthill ◽

D. P. Malta ◽

R. Venkatasubramanian ◽

P. R. Sharps ◽

M. L. Timmons ◽

...

Keyword(s):

Molecular Beam ◽

Lattice Mismatch ◽

Antiphase Domain ◽

Multilayer Structures ◽

Si Substrate ◽

Mbe Growth ◽

Etch Pit ◽

Layer Structures ◽

Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

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