scholarly journals A Comparative Study of Spin Coated Transparent Conducting Thin Films of Gallium and Aluminum Doped ZnO Nanoparticles

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
A. Alkahlout
Keyword(s):  
Thin Films ◽  
Sintering Temperature ◽  
Hexagonal Structure ◽  
Single Step ◽  
Al Doping ◽  
Glass Substrates ◽  
Reducing Atmosphere ◽  
Transparent Conducting ◽  
Optimum Doping Concentration ◽  
Doping Ratio

Transparent conducting Ga:ZnO (GZO) and Al:ZnO (AZO) layers have been deposited by spin coating on glass substrates using crystalline nanoparticles redispersed in 1-propanol. The coatings have been sintered in air at 600°C for 15 min and then postannealed in a reducing atmosphere at 400°C for 90 min. The effect of Ga and Al doping on the structural, morphological, optical, and electrical properties of the obtained thin films was investigated. Both films were found to be crystalline with a hexagonal structure. A single step spin coated layer 52–56 nm thick is obtained. To increase the thickness and lower the obtained sheet resistance multilayers coatings have been used. The visible transmission of both layers is high (T>80%). The influence of the sintering temperature and the optimum doping concentration was investigated. Five layers synthesized with doping ratio of 1 mol.% and sintered at 600°C and then submitted to reducing treatment in forming gas exhibited a minimum resistivity value of 7.4 × 10−2 Ω·cm for GZO layer and 1.45 Ω·cm for AZO coating.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2020 ◽  
Vol 15 (1) ◽  
pp. 101-107
Author(s):  
M. Karunakaran ◽  
L. Bruno Chandrasekar ◽  
K. Kasirajan ◽  
R. Chandramohan
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Hexagonal Structure ◽  
Silar Method ◽  
Texture Coefficients ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Metal Doped

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.

STRUCTURAL AND OPTICAL CHARACTERIZATION OF CdS:Fe THIN FILMS PREPARED BY FLASH EVAPORATION METHOD

2012 ◽  
Vol 19 (02) ◽  
pp. 1250012 ◽  
Author(s):  
H. R. DIZAJI ◽  
M. GHASEMIAN ◽  
M. H. EHSANI
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Iron Concentration ◽  
Hexagonal Structure ◽  
Thin Layers ◽  
Flash Evaporation ◽  
Orientation Field ◽  
Absorption Data ◽  
Glass Substrates ◽  
Cds Film

CdS thin layers of 250 nm thick doped with zero, 0.1, 0.2 and 0.3 weight percents iron were deposited on glass substrates by modified flash evaporation technique in vacuum at the pressure of 5 × 10−6 mbar. The structure of the films was investigated by X-ray diffractometry. It was revealed that the films had hexagonal structure with (002) preferred orientation. Field emission scanning electron microscopy (FESEM) was employed to study the surface morphology of the prepared samples. It was found from FESEM images that the Fe -doped CdS film showed more surface uniformity. Optical absorption data of the films were used to measure the band gap of the films. It was found that the band gap of the samples decreased upon increasing the Iron concentration. Photoluminescence (PL) spectra of the CdS:Fe thin films were used to study most prominent excitation peaks within the energy range (1.6–2.6 eV). The variation in peak energy was observed upon increasing the Fe content in the films.

Characterization of Transparent Conducting Al:ZnO Thin Films Deposited by Chemical Spray Pyrolysis

2009 ◽  
Vol 67 ◽  
pp. 103-108 ◽  
Author(s):  
C.M. Mahajan ◽  
A.G. Godbole ◽  
S.P. Gumfekar ◽  
S.H. Sonawane ◽  
M.G. Takwale
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Resistivity Measurement ◽  
Aluminium Chloride ◽  
Al2o3 Content ◽  
Chemical Spray Pyrolysis ◽  
Al Doping ◽  
X Ray ◽  
Transparent Conducting ◽  
Chemical Spray

Nanocrystalline undoped and Al doped ZnO thin films were synthesized by the chemical spray pyrolysis of Zinc acetate and Aluminium chloride solution. The optoelectronic properties of undoped and Al:ZnO films were investigated. The XRD patterns of films were preferably oriented along c-axis [0 0 2] plane with the hexagonal wurtzite structure. The Al-doping caused no additional X-ray diffraction peaks when compared with XRD of undoped film, indicating Al2O3 content was below the detection limit. The crystallite size of undoped and Al doped film was 48 nm and 51nm respectively, as measured from X-ray diffractogram. The films are of high optical transmittance (≥ 90%). The resistivity of the film was found to decrease because of Al doping. The dark resistivity measurement for Al:ZnO film was of the order of 10-3 Ω-1cm-1. The band gap energy of the film was found to vary from 3.25 to 3.32eV indicating the Moss Burstein shift. Al:ZnO films can be used as transparent conducting oxide layers for photovoltaic applications.

Optical and electrical properties of transparent conducting In2O3–ZrO2 films

2000 ◽  
Vol 15 (1) ◽  
pp. 21-24 ◽  
Author(s):  
S. B. Qadri ◽  
H. Kim ◽  
H. R. Khan ◽  
A. Piqué ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Electrical Conductivities ◽  
Electrical Resistivities

The optical transparencies and electrical conductivities of thin films of In2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium–zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting and more than 80% transparent from 450 to 700 nm. As the ZrO2 content increased from 0 to 15 wt%, the electrical resistivities increased from 1.28 × 10−3 to 6.48 × 10−2 Ω cm, the carrier densities were decreased from 2.14 × 1020 to 1.0 × 1018/cm3, and the Hall mobilities decreased from 21 to 5 cm2 V−1 s−1, all monotonically.

STUDY OF CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS WITH SUBSTRATE VIBRATION

2008 ◽  
Vol 15 (06) ◽  
pp. 821-827 ◽  
Author(s):  
Z. Q. BIAN ◽  
X. B. XU ◽  
J. B. CHU ◽  
Z. SUN ◽  
Y. W. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Alkaline Conditions ◽  
Zns Films

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide ( ZnS ) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5–3.70 eV.

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