Optical and electrical properties of fluorine doped tin oxide thin film

Fluorine doped tin oxide (FTO) thin film was prepared by using two different precursor solutions which are tin (ii) chloride dihydrate and tin (iv) chloride pentahydrate. These two precursors are used in spray pyrolysis process to prepare the fluorine doped tin oxide thin film. Surface Morphology of the thin film was characterized using field emission scanning electron microscope (FE-SEM). FESEM image shows the particle distribution and the morphology of fluorine doped tin oxide thin film. Two point probe I-V measurement and UV-Vis spectroscopy were used to study the electrical and optical properties of both films. Both precursors produced different particles distribution, electrical properties and also optical properties. The results show that the sheet resistance (Rs) of fluorine doped SnO2 is about 49.24×106Ω for tin (iv) chloride pentahydrate compared to 43.03×1012Ω for tin (ii) chloride dihydrate

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Effects of channel thickness on electrical properties and stability of zinc tin oxide thin-film transistors

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/46/47/475106 ◽

2013 ◽

Vol 46 (47) ◽

pp. 475106 ◽

Cited By ~ 21

Author(s):

Myeong Gu Yun ◽

So Hee Kim ◽

Cheol Hyoun Ahn ◽

Sung Woon Cho ◽

Hyung Koun Cho

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Channel Thickness ◽

Zinc Tin Oxide

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Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2013.04.051 ◽

2013 ◽

Vol 544 ◽

pp. 129-133 ◽

Cited By ~ 17

Author(s):

CheolGyu Kim ◽

Nam-Hyun Lee ◽

Young-Kyu Kwon ◽

Bongkoo Kang

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Film Thickness ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide

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UV-Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors

Advanced Materials ◽

10.1002/adma.201204236 ◽

2013 ◽

Vol 25 (21) ◽

pp. 2994-3000 ◽

Cited By ~ 65

Author(s):

Keon-Hee Lim ◽

Kyongjun Kim ◽

Seonjo Kim ◽

Si Yun Park ◽

Hyungjun Kim ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Alkali Metal ◽

Tin Oxide ◽

Thin Film Transistors ◽

Spectroscopic Analysis ◽

Oxide Thin Film ◽

Zinc Tin Oxide ◽

Uv Visible ◽

Metal Doped

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Effect of RF Sputtering Power and Deposition Time on Optical and Electrical Properties of Indium Tin Oxide Thin Film

Advances in Materials Science and Engineering ◽

10.1155/2021/5556305 ◽

2021 ◽

Vol 2021 ◽

pp. 1-14

Author(s):

Abdelaziz Tchenka ◽

Abdelali Agdad ◽

Mohamed Cheikh Samba Vall ◽

Salma Kaotar Hnawi ◽

Abdelfattah Narjis ◽

...

Keyword(s):

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Deposition Time ◽

Rf Sputtering ◽

Oxide Thin Film ◽

Optical And Electrical Properties ◽

Rf Power ◽

Electrical Measurements ◽

X Ray

Indium tin oxide (ITO) films are widely used as transparent conducting electrodes in solar cells, gas sensors, and car windows because of their high electrical conductivity and good optical transparency in the visible region. In this work, ITO thin films were prepared by cathodic radio-frequency (RF) sputtering using an ITO target with 90% In2O3 and 10% SnO2. The structural properties were studied by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and X-ray reflectometry (XRR). Electrical measurements were performed by applying the four-point method and studying the Hall Effect. Finally, optical properties were taken by the UV-Vis-NIR spectrophotometry. The effect of the RF power and deposition time on optical and electrical properties was investigated. It is shown that by using a RF power of 110–80 W, one can prepare crystalline samples with low resistivity, which is an aimed property for TCO semiconductors. Electrical measurements revealed that the resistivity decreases by increasing the RF power and/or the deposition time.

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