Impact of in situ current stressing on Sn-based solder joint shear stability

2021 ◽  
Author(s):  
Scott Fuller ◽  
Mohamed Sheikh ◽  
Greg Baty ◽  
Choong-Un Kim ◽  
Tae-Kyu Lee
Keyword(s):  
Solder Joint ◽  
Shear Stability ◽  
Current Stressing ◽  
Joint Shear

scholarly journals Imaging the Polymorphic Transformation in a Single Cu6Sn5 Grain in a Solder Joint

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2229 ◽  
Author(s):  
Flora Somidin ◽  
Hiroshi Maeno ◽  
Xuan Tran ◽  
Stuart D. McDonald ◽  
Mohd Mohd Salleh ◽  
...  
Keyword(s):  
Solder Joint ◽  
Polymorphic Transformation ◽  
Structural Evolution ◽  
Real Space ◽  
Transformation Behavior ◽  
New Approach ◽  
Transmission Electron ◽  
Contrast Pattern ◽  
In Situ Observations

In-situ observations of the polymorphic transformation in a single targeted Cu6Sn5 grain constrained between Sn-0.7 wt % Cu solder and Cu-Cu3Sn phases and the associated structural evolution during a solid-state thermal cycle were achieved via a high-voltage transmission electron microscope (HV-TEM) technique. Here, we show that the monoclinic η′-Cu6Sn5 superlattice reflections appear in the hexagonal η-Cu6Sn5 diffraction pattern upon cooling to isothermal 140 °C from 210 °C. The in-situ real space imaging shows that the η′-Cu6Sn5 contrast pattern is initiated at the grain boundary. This method demonstrates a new approach for further understanding the polymorphic transformation behavior on a real solder joint.

Effect of temperature on interface diffusion in micro solder joint under current stressing

2015 ◽  
Vol 25 (5) ◽  
pp. 1699-1703 ◽  
Author(s):  
Xue-mei LI ◽  
Feng-lian SUN ◽  
Hao ZHANG ◽  
Tong XIN
Keyword(s):  
Solder Joint ◽  
Effect Of Temperature ◽  
Interface Diffusion ◽  
Current Stressing

Electromigration of Electroplated Gold Interconnects

2005 ◽  
Vol 863 ◽  
Author(s):  
Steve Kilgore ◽  
Craig Gaw ◽  
Haldane Henry ◽  
Darrell Hill ◽  
Dieter Schroder
Keyword(s):  
Activation Energy ◽  
Diffusion Mechanism ◽  
Time To Failure ◽  
Ambient Temperatures ◽  
Temperature Coefficients ◽  
Current Stressing ◽  
Monitoring Technique ◽  
The Times ◽  
A Current

AbstractElectromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperatures ranging from 325°C to 375°C. The temperature coefficients of resistance (TCR) values were measured prior to current stressing to calculate the Joule heated film temperatures. The times to failure (lifetimes) for the Au line structures were considered as a 50% ΔR/R0 change. The median time to failure (t50%) was plotted against the inverse film temperature to determine the activation energy value as 0.59 ± 0.09 eV. Failure analysis of void location and suggested diffusion mechanism will be discussed.

In-situ observation of material migration in flip-chip solder joints under current stressing

2006 ◽  
Vol 35 (10) ◽  
pp. 1781-1786 ◽  
Author(s):  
C. M. Tsai ◽  
Yi-Shao Lai ◽  
Y. L. Lin ◽  
C. W. Chang ◽  
C. R. Kao
Keyword(s):  
Flip Chip ◽  
Solder Joints ◽  
In Situ Observation ◽  
Current Stressing ◽  
Material Migration

In situ observation of the void formation-and-propagation mechanism in solder joints under current-stressing

2005 ◽  
Vol 53 (7) ◽  
pp. 2029-2035 ◽  
Author(s):  
Y.H. Lin ◽  
Y.C. Hu ◽  
C.M. Tsai ◽  
C.R. Kao ◽  
K.N. Tu
Keyword(s):  
Solder Joints ◽  
Void Formation ◽  
Propagation Mechanism ◽  
In Situ Observation ◽  
Current Stressing
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