Electromigration of Electroplated Gold Interconnects

2005 ◽  
Vol 863 ◽  
Author(s):  
Steve Kilgore ◽  
Craig Gaw ◽  
Haldane Henry ◽  
Darrell Hill ◽  
Dieter Schroder
Keyword(s):  
Activation Energy ◽  
Diffusion Mechanism ◽  
Time To Failure ◽  
Ambient Temperatures ◽  
Temperature Coefficients ◽  
Current Stressing ◽  
Monitoring Technique ◽  
The Times ◽  
A Current

AbstractElectromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperatures ranging from 325°C to 375°C. The temperature coefficients of resistance (TCR) values were measured prior to current stressing to calculate the Joule heated film temperatures. The times to failure (lifetimes) for the Au line structures were considered as a 50% ΔR/R0 change. The median time to failure (t50%) was plotted against the inverse film temperature to determine the activation energy value as 0.59 ± 0.09 eV. Failure analysis of void location and suggested diffusion mechanism will be discussed.

Effects of electromigration on the growth of intermetallic compounds in Cu/SnBi/Cu solder joints

2008 ◽  
Vol 23 (10) ◽  
pp. 2591-2596 ◽  
Author(s):  
X. Gu ◽  
D. Yang ◽  
Y.C. Chan ◽  
B.Y. Wu
Keyword(s):  
Activation Energy ◽  
Solder Joint ◽  
Intermetallic Compounds ◽  
Direct Current ◽  
Solder Joints ◽  
Cathode Side ◽  
Anode Side ◽  
Kinetics Parameters ◽  
Ambient Temperatures ◽  
Current Stressing

In this study, the effects of electromigration (EM) on the growth of Cu–Sn intermetallic compounds (IMCs) in Cu/SnBi/Cu solder joints under 5 × 103 A/cm2 direct current stressing at 308, 328, and 348 K were investigated. For each Cu/SnBi/Cu solder joint under current stressing, the IMCs at the cathode side grew faster than that at the anode side. The growth of these IMCs at the anode side and the cathode side were enhanced by electric current. The growth of these IMCs at the cathode followed a parabolic growth law. The kinetics parameters of the growth of the IMCs were calculated from the thickness data of the IMCs at the cathode side at different ambient temperatures. The calculated intrinsic diffusivity (D0) of the Cu–Sn IMCs was 9.91 × 10−5 m2/s, and the activation energy of the growth of the total Cu–Sn IMC layer was 89.2 kJ/mol (0.92 eV).

Electromigration Lifetimes of Single Crystal Aluminum Lines with Different Crystallographic Orientations

1994 ◽  
Vol 338 ◽  
Author(s):  
Y.-C. Joo ◽  
C.V. Thompson
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Diffusion Mechanism ◽  
Failure Mechanisms ◽  
Bulk Diffusion ◽  
Time To Failure ◽  
Interface Diffusion ◽  
Test Conditions ◽  
Service Conditions ◽  
Crystallographic Orientations

ABSTRACTNear-bamboo interconnects are susceptible to failure either at polygranular clusters or within bamboo grains (transgranular failure). Polygranular failure mechanisms are often dominant in lines with near-bamboo structures at test conditions, but at service conditions, transgranular failure mechanisms are expected to dominate. In order to study the temperature and current density dependence as well as the crystallographic dependence of these transgranular failure mechanisms, it is necessary to isolate them from other mechanisms. To do this, we have studied single crystal Al lines on oxidized silicon.We have tested lifetimes of passivated and unpassivated Al single crystal lines with various textures. In both passivated and unpassivated lines, the median time to failure, t50, was found to be texture-dependent, with t50(l11) > t50(133) > t50(110), and with t50(111) ∼ 10×t50(110). The activation energy for failure for both passivated and unpassivated (110) single crystal lines was about 1 eV. This value differs from that of aluminum bulk diffusion (1.4 eV), suggesting that interface diffusion is the dominant diffusion mechanism in these lines, and perhaps in bamboo regions of near-bamboo lines as well.

Electromigration in Submicron Wide Copper Lines

1996 ◽  
Vol 427 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev ◽  
Yu. I. Koval ◽  
S. V. Dubonos ◽  
V. T. Volkov
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Silicon Oxide ◽  
Parallel Line ◽  
Silicon Wafers ◽  
The Self ◽  
Copper Films ◽  
Time To Failure ◽  
Electron Lithography ◽  
A Current

AbstractCopper films were deposited onto oxidized silicon wafers by the self-ion assisted technique. A 0 and 6 kV bias was applied to the substrate during the deposition. The films were patterned into parallel line arrays of 20 lines 0.5 mm long, using electron lithography and dry etching. After patterning, the lines were covered by silicon oxide and annealed in vacuum for 1 hour at the temperature 450° C. Electromigration testing was performed in air in the temperature range from 280° to 350° C and at a current density 3.106 A/cm2.It was found that the resistivities of the films deposited at 6 kV and without bias were 1.7 and 2.0 μΩcm, respectively. The median times to failure are 398.6 and 240 h and the deviations in the time to failure are 0.8 and 0.54 for 6 kV lines and 0 kV lines, respectively. An electromigration activation energy of 0.89 eV was found for 0 kV films.

Electromigration In Submicron Wide Copper Lines

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev ◽  
Yu. I. Koval ◽  
S. V. Dubonos ◽  
V. T. Volkov
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Silicon Oxide ◽  
Parallel Line ◽  
Silicon Wafers ◽  
The Self ◽  
Copper Films ◽  
Time To Failure ◽  
Electron Lithography ◽  
A Current

AbstractCopper films were deposited onto oxidized silicon wafers by the self-ion assisted technique. A 0 and 6 kV bias was applied to the substrate during the deposition. The films were patterned into parallel line arrays of 20 lines 0.5 mm long, using electron lithography and dry etching. After patterning, the lines were covered by silicon oxide and annealed in vacuum for 1 hour at the temperature 450° C. Electromigration testing was performed in air in the temperature range from 280° to 350° C and at a current density 3.106 A/cm2.It was found that the resistivities of the films deposited at 6 kV and without bias were 1.7 and 2.0 μΩ-cm, respectively. The median times to failure are 398.6 and 240 h and the deviations in the time to failure are 0.8 and 0.54 for 6 kV lines and 0 kV lines, respectively. An electromigration activation energy of 0.89 eV was found for 0 kV films.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Analysis of movement of persons with disabilities during evacuation by lift

2020 ◽  
Vol 15 (1) ◽  
pp. 209-220
Author(s):  
Martin Szénay ◽  
Martin Lopušniak
Keyword(s):  
Computational Models ◽  
Persons With Disabilities ◽  
Entire Process ◽  
Injured Person ◽  
Impaired People ◽  
Movement Parameters ◽  
The Times ◽  
Mobility Impaired

Abstract Lifts are indispensable for the evacuation of mobility-impaired people from buildings in case of emergency. It is necessary to quantify the movement parameters of these people and describe the entire process using a suitable algorithm. The aim of the research was to quantify the times and speeds of movement for a person using a wheelchair and for an injured person. An experiment in situ was used. During the experiment, arrivals at the lift, cabin entries, and exits were monitored. The results include the times and speeds of a mobility-impaired person's movement. The experiments showed that a person using a wheelchair was slower than an injured person. The results can be used to expand computational models to account for the possibility of using lifts for evacuation.

Estudio del proceso de lavado de contenedores para eliminar tiempos y movimientos innecesarios, caso: Wash Containers S.A de C.V.

2020 ◽  
pp. 25-36
Author(s):  
Juan Alfredo Lino-Gamiño ◽  
Carlos Méndez-González ◽  
Eduardo José Salazar-Araujo ◽  
Pablo Adrián Magaña-Sánchez
Keyword(s):  
Business Process ◽  
Value Chain ◽  
Process Management ◽  
Core Business ◽  
The Core ◽  
Washing Process ◽  
Overall Performance ◽  
The Times

In the value chain it is important to keep in mind the core business of the company, since it depends largely on the competitiveness of the company and its overall performance, bearing in mind that all business indicators depend on it. In this work we will study the washing process within the company WASH CONTAINERS SA DE CV, to improve the washing processes and in this way reduce times and movements in the process leading the company to reduce costs considerably within the operations company daily, having a more competitive operation and with greater profit margin in its business process. Goals: It Improve the logistics of the movement of containers for washing and with it the core business of the company. Methodology: The action research will be applied applying Business Process Management for the improvement of processes in situ, it will be developed in a certain period of time and with that it will establish an improvement projection. Contribution: The improvement of the times for the disposal of the containers and their subsequent use, allows a better competitiveness and with it the income of the company, on the other hand, the transport companies improve in performance in quantity, quality of disposition and with it their income.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

Sample Preparation of Aluminum Bridge Test Vehicles for Tem In-Situ Crystallographic Studies of Electromigration

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Circuit Reliability ◽  
Test Vehicle ◽  
Aluminum Films ◽  
Current Densities ◽  
Integrated Circuit Reliability ◽  
A Current

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.

A NEW ORGANIC/INORGANIC HYBRID WITH HIGH ELECTRORHEOLOGICAL ACTIVITY

2002 ◽  
Vol 16 (17n18) ◽  
pp. 2454-2460 ◽  
Author(s):  
X. P. ZHAO ◽  
X. DUAN
Keyword(s):  
Activation Energy ◽  
Shear Stress ◽  
Necessary Conditions ◽  
Sol Gel ◽  
Root Temperature ◽  
Sedimentation Stability ◽  
Inorganic Hybrid ◽  
Active Particles ◽  
Static Shear

In-situ sol-gel method to prepare colloidal hybrids of surfactant modified polysucchride and titanium oxide has been presented, and experiments indicated these highly ER active particles exhibited a remarkable ER effect. The static shear stress can be up to 37 k Pa (shear rate 5 S -1) under DC field of 4 kV/mm at root temperature, well above that of simple blends of starch and TiO 2. In the meanwhile, temperature dependence and sedimentation stability were also greatly improved. Based on recent experimental facts, we find that dielectric properties and surface (interface) activity are two necessary conditions fulfilling the requirement of high ER activity. Adequate grinding of particles with oil can effectively enhance the shear stress, which may be owed to the decline of the activation energy needed for restructuring. It has provided us a new horizon for preparation of excellent ER materials and further studies should be continued to make.

Sign in / Sign up

Export Citation Format

Share Document