The Effect of Substrate Temperature on the Structure and Morphology of Titanium Nitride Compounds Grown by DC Magnetron Sputtering

2011 ◽  
Vol 30 (4) ◽  
pp. 333-337 ◽  
Author(s):  
M. R. Hantehzadeh ◽  
R. Bavadi ◽  
A. H. Sari ◽  
M. Ghoranneviss
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Titanium Nitride ◽  
Dc Magnetron Sputtering ◽  
Structure And Morphology

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

1998 ◽  
Vol 507 ◽  
Author(s):  
A.A. Andreev ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov ◽  
V.B. Voronkov
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Thermal Annealing ◽  
Structural Rearrangement ◽  
Nitrogen Atmosphere ◽  
Annealing Effect ◽  
Dc Magnetron Sputtering ◽  
Amorphous Network ◽  
Erbium Doped ◽  
Pl Intensity

ABSTRACTCumulative thermal annealing (TA) changes the photoluminescence (PL) intensity in erbium-doped a-Si:H films prepared using DC magnetron sputtering of a composite Er-Si target at substrate temperature 200°C. The intensity of erbium-related 1.54 νm PL at 77 K is enhanced about 50 times after TA at 300°C for 15 min in nitrogen atmosphere. No erbium-related PL is observed after TA at T≤500°C. The TA process is discussed in terms of a model of partial structural rearrangement in an a-Si(Er):H amorphous network.

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