Estimation of the deformation-potential constant for p-type isotropic polycrystalline silicon through the deformation potential of a p-type silicon single crystal

2011 ◽  
Vol 54 (2) ◽  
pp. 226-238
Author(s):  
A. G. Moiseev
Keyword(s):  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Silicon Single Crystal ◽  
Deformation Potential ◽  
Potential Constant ◽  
Type Silicon ◽  
P Type

scholarly journals 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

2018 ◽  
Vol 112 (8) ◽  
pp. 081101 ◽  
Author(s):  
Dong Liu ◽  
Sang June Cho ◽  
Jeongpil Park ◽  
Jung-Hun Seo ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Hole Injection ◽  
Type Silicon ◽  
P Type ◽  
Uv Leds

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

Synthesis of Silicon Nitride Whiskers by Microwave Heating

1998 ◽  
Vol 547 ◽  
Author(s):  
S. Gedevanishvili ◽  
K. Cherian ◽  
D. Agrawal ◽  
R. Roy
Keyword(s):  
Silicon Nitride ◽  
Single Crystal ◽  
Microwave Heating ◽  
Polycrystalline Silicon ◽  
Silicon Powder ◽  
Silicon Single Crystal ◽  
Optimum Temperature ◽  
Solid Reaction ◽  
Powder Compacts ◽  
Microstructural Data

AbstractWhiskers of silicon nitride were synthesized by heating silicon powder compacts, silicon single crystal and polycrystalline silicon in microwave in the presence of flowing forming gas or nitrogen. Various gas compositions and form of silicon used resulted in different whisker morphologies. Silicon powder as starting material leads to the formation of needle-like whiskers while silicon single crystal and polycrystalline silicon led to the formation of wool-like and web-like structures respectively. Length of the whiskers apparently depends on the holding time at the optimum temperature ~1350°C; whiskers up to 250 micrometers in length may be grown in 30 minutes. Microstructural data suggest that the silicon nitride whiskers form through gas-solid reaction and vapor-solid mechanism.

Photocatalysis of platinum-coated n-type silicon single-crystal wafers in relation to surface heterogeneity

Langmuir ◽  
1986 ◽  
Vol 2 (4) ◽  
pp. 377-380 ◽  
Author(s):  
Hiroshi. Yoneyama ◽  
Nobuyuki. Matumoto ◽  
Hideo. Tamura
Keyword(s):  
Single Crystal ◽  
Surface Heterogeneity ◽  
Silicon Single Crystal ◽  
Type Silicon

scholarly journals Влияние температуры отжига на электрически активные центры в кремнии, имплантированном ионами германия

2019 ◽  
Vol 53 (2) ◽  
pp. 161
Author(s):  
Н.А. Соболев ◽  
О.В. Александров ◽  
В.И. Сахаров ◽  
И.Т. Серенков ◽  
Е.И. Шек ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Annealing Temperature ◽  
Single Crystal Silicon ◽  
High Temperature Annealing ◽  
Crystal Silicon ◽  
Type Silicon ◽  
Special Distribution ◽  
P Type

AbstractThe implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

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