Work function difference between p-type polycrystalline silicon and n-type single-crystal silicon

1971 ◽  
Vol 59 (2) ◽  
pp. 301-302
Author(s):  
C.C. Mai ◽  
T.S. Whitehouse
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Work Function Difference ◽  
P Type ◽  
Function Difference

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

Microheater Made of Heavily Boron Doped Single Crystal Silicon Beam

1992 ◽  
Vol 276 ◽  
Author(s):  
Mitsuteru Kimura ◽  
Kazuhiro Komatsuzaki
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bridge Structure ◽  
Quick Response ◽  
Crystal Silicon ◽  
Etching Technique ◽  
Small Power ◽  
Boron Doped ◽  
Type Layer ◽  
P Type

ABSTRACTMicroheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000×300×3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 °C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate,this area can be electrically isolated from the substrate because of the formation of p-n junction.

Semi-automatic, volume production of silicon solar cells

1987 ◽  
Vol 65 (8) ◽  
pp. 892-896 ◽  
Author(s):  
R. E. Thomas ◽  
C. E. Norman ◽  
S. Varma ◽  
G. Schwartz ◽  
E. M. Absi
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Plasma Etching ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
High Yield ◽  
Silicon Solar Cells ◽  
Crystal Silicon ◽  
Volume Production ◽  
P Type

A low-cost, high-yield technology for producing single-crystal silicon solar cells at high volumes, and suitable for export to developing countries, is described. The process begins with 100 mm diameter as-sawn single-crystal p-type wafers with one primary flat. Processing steps include etching and surface texturization, gaseous-source diffusion, plasma etching, and contacting via screen printing. The necessary adaptations of such standard processes as diffusion and plasma etching to solar-cell production are detailed. New process developments include a high-throughput surface-texturization technique, and automatic printing and firing of cell contacts.The technology, coupled with automated equipment developed specifically for the purpose, results in solar cells with an average efficiency greater than 12%, a yield exceeding 95%, a tight statistical spread on parameters, and a wide tolerance to starting substrates (including the first 100 mm diameter wafers made in Canada). It is shown that with minor modifications, the present single shift 500 kWp (kilowatt peak) per year capacity technology can be readily expanded to 1 MWp per year, adapted to square and polycrystalline substrates, and efficiencies increased above 13%.

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Persistent Photocurrent in InP Nanowires Heteroepitaxially Bridged Between Single Crystal Si Surfaces

2008 ◽  
Vol 1080 ◽  
Author(s):  
Ataur Sarkar ◽  
M. Saif Islam ◽  
Sungsoo Yi ◽  
A. Alec Talin
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Relaxation Times ◽  
Single Crystal Silicon ◽  
Surface States ◽  
Photonic Devices ◽  
Crystal Silicon ◽  
Slow Decay ◽  
Visible Laser ◽  
P Type

ABSTRACTRoom temperature photoelectrical characterization with 325-nm ultraviolet and 633-nm visible laser excitations is performed on lateral p-type InP nanowires bridged between vertically oriented heavily p-doped single crystal silicon electrodes. Experimental results under 5 V bias demonstrate persistent photoconductivity through a slow decay of excess photocurrent with relaxation times ∼110 s and ∼50 s for the UV and visible laser illuminations, respectively. Persistent photocurrent originates from the long recombination time due to carrier trapping in vacancies, defect centers, and surface states in the InP nanowires. The study opens a new understanding of trap physics of nanowire heterostructures, a critical investigation for applications of these materials in photonic devices.

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