Coverage-Dependent Adsorption at a Low Symmetry Surface: DFT and Statistical Analysis of Oxygen Chemistry on Kinked Pt(321)

If we make a set of measurements, such as narrow-band or multicolour photo-electric measurements, which are designed to improve a scheme of classification, and in particular if they are designed to extend the number of dimensions of classification, i.e. the number of classification parameters, then some important problems of analytical procedure arise. First, it is important not to reproduce the errors of the classification scheme which we are trying to improve. Second, when trying to extend the number of dimensions of classification we have little or nothing with which to test the validity of the new parameters.Problems similar to these have occurred in other areas of scientific research (notably psychology and education) and the branch of Statistics called Multivariate Analysis has been developed to deal with them. The techniques of this subject are largely unknown to astronomers, but, if carefully applied, they should at the very least ensure that the astronomer gets the maximum amount of information out of his data and does not waste his time looking for information which is not there. More optimistically, these techniques are potentially capable of indicating the number of classification parameters necessary and giving specific formulas for computing them, as well as pinpointing those particular measurements which are most crucial for determining the classification parameters.

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Use of 2½ D imaging in analysis of NiTi martensite

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100110192 ◽

1978 ◽

Vol 36 (1) ◽

pp. 610-611

Author(s):

G. M. Michal

Keyword(s):

Memory Effect ◽

Monoclinic Phase ◽

Reaction Path ◽

Structural Characteristics ◽

Salient Feature ◽

Martensite Phase ◽

Orientation Relationships ◽

Low Symmetry ◽

Hydride Phases ◽

Unusual Shape

Several TEM investigations have attempted to correlate the structural characteristics to the unusual shape memory effect in NiTi, the consensus being the essence of the memory effect is ostensible manifest in the structure of NiTi transforming martensitic- ally from a B2 ordered lattice to a low temperature monoclinic phase. Commensurate with the low symmetry of the martensite phase, many variants may form from the B2 lattice explaining the very complex transformed microstructure. The microstructure may also be complicated by the enhanced formation of oxide or hydride phases and precipitation of intermetallic compounds by electron beam exposure. Variants are typically found in selfaccommodation groups with members of a group internally twinned and the twins themselves are often observed to be internally twinned. Often the most salient feature of a group of variants is their close clustering around a given orientation. Analysis of such orientation relationships may be a key to determining the nature of the reaction path that gives the transformation its apparently perfect reversibility.

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Quantitative parallel EELS spectrum imaging developed as a new tool in AEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010013064x ◽

1992 ◽

Vol 50 (2) ◽

pp. 1202-1203

Author(s):

Gianluigi Botton ◽

Gilles L'espérance

Keyword(s):

Statistical Analysis ◽

Spatial Resolution ◽

Personal Computer ◽

Systematic Study ◽

Present Author ◽

Chemical Elements ◽

Detection Limits ◽

Research Groups ◽

Quantitative Performance ◽

Spectrum Imaging

As interest for parallel EELS spectrum imaging grows in laboratories equipped with commercial spectrometers, different approaches were used in recent years by a few research groups in the development of the technique of spectrum imaging as reported in the literature. Either by controlling, with a personal computer both the microsope and the spectrometer or using more powerful workstations interfaced to conventional multichannel analysers with commercially available programs to control the microscope and the spectrometer, spectrum images can now be obtained. Work on the limits of the technique, in terms of the quantitative performance was reported, however, by the present author where a systematic study of artifacts detection limits, statistical errors as a function of desired spatial resolution and range of chemical elements to be studied in a map was carried out The aim of the present paper is to show an application of quantitative parallel EELS spectrum imaging where statistical analysis is performed at each pixel and interpretation is carried out using criteria established from the statistical analysis and variations in composition are analyzed with the help of information retreived from t/γ maps so that artifacts are avoided.

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The usefulness of high index low symmetry zone axes for holz line analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126718 ◽

1987 ◽

Vol 45 ◽

pp. 384-385

Author(s):

C. M. Sung ◽

D. B. Williams

Keyword(s):

Lattice Parameter ◽

High Order ◽

Zone Axis ◽

High Index ◽

High Symmetry ◽

Second Phases ◽

Line Patterns ◽

Low Symmetry ◽

Line Analysis

Researchers have tended to use high symmetry zone axes (e.g. <111> <114>) for High Order Laue Zone (HOLZ) line analysis since Jones et al reported the origin of HOLZ lines and described some of their applications. But it is not always easy to find HOLZ lines from a specific high symmetry zone axis during microscope operation, especially from second phases on a scale of tens of nanometers. Therefore it would be very convenient if we can use HOLZ lines from low symmetry zone axes and simulate these patterns in order to measure lattice parameter changes through HOLZ line shifts. HOLZ patterns of high index low symmetry zone axes are shown in Fig. 1, which were obtained from pure Al at -186°C using a double tilt cooling holder. Their corresponding simulated HOLZ line patterns are shown along with ten other low symmetry orientations in Fig. 2. The simulations were based upon kinematical diffraction conditions.

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Strain measurement by means of bend contour microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100153026 ◽

1989 ◽

Vol 47 ◽

pp. 210-211

Author(s):

Philip D. Hren

Keyword(s):

Strain Measurement ◽

Large Angle ◽

Single Crystal Silicon ◽

Convergent Beam Electron Diffraction ◽

Zone Axis ◽

Silicon Membrane ◽

Crystal Silicon ◽

Contour Pattern ◽

Convergent Beam ◽

Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

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