Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction

2010 ◽  
Vol 53 (3) ◽  
pp. 465-468 ◽  
Author(s):  
YuChao Zhang ◽  
ZhiGang Xing ◽  
ZiGuang Ma ◽  
Yao Chen ◽  
GuoJian Ding ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Sapphire Substrate ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

2017 ◽  
Vol 26 (12) ◽  
pp. 127309 ◽  
Author(s):  
Yuan-Hao Miao ◽  
Hui-Yong Hu ◽  
Xin Li ◽  
Jian-Jun Song ◽  
Rong-Xi Xuan ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Epitaxial Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

scholarly journals On the Study of Dislocation Density in MBE GaSb-Based Structures

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1074
Author(s):  
Agata Jasik ◽  
Dariusz Smoczyński ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Measurement Techniques ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Gaas Sample ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Threading Dislocation Density

The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures.

Dislocation Distributions in Cd1-xHgxTe/CdTe and Cd1-xHgxTe/Cd1-yZnyTe Grown by Liquid Phase Epitaxy

1994 ◽  
Vol 356 ◽  
Author(s):  
C. C. R. Watson ◽  
K. Durose ◽  
E. O’Keefe ◽  
J. M. Hudson ◽  
B. K. Tanner
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
O 24

Epilayers of LPE Cdo.24Hgo.76Te grown on (111)B CdTe and Cdi-xZnxTe substrates have been examined by defect etching and triple axis x-ray diffraction. Defect etching of bevelled layers has shown the threading dislocation density to fall with increasing distance from the heterointerface, for distances <6μm. In thicker regions however a constant ‘background’ dislocation density is observed. Background dislocation densities of ∼ 3 x 105cm-2 and 9 x 104cm-2 have been measured for layers grown on CdTe and Cdo.96Zn0.04Te respectively, this is compared with a substrate dislocation density of ∼ 3 x 104cm-2 measured in both types of substrates. The increase in the dislocation density within the epilayers compared with the corresponding substrate is discussed. An explanation is also given for the displacement of the peak dislocation density, from the interface to within the layer, observed in the Cd0.76Hg0.24Te / Cd0.96Zn0.04Te system.

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

2020 ◽  
Vol 257 (4) ◽  
pp. 1900579
Author(s):  
Victor Yon ◽  
Névine Rochat ◽  
Matthew Charles ◽  
Emmanuel Nolot ◽  
Patrice Gergaud
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

Defect Reduction in Cd1-xZnxTe Epilayers on GaAs Substrates

1994 ◽  
Vol 299 ◽  
Author(s):  
Saket Chadda ◽  
Kevin Malloy ◽  
John Reno
Keyword(s):  
Threading Dislocation ◽  
Full Width ◽  
X Ray Diffraction ◽  
Defect Reduction ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Optimum Period ◽  
Bulk Alloys

AbstractCd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

1995 ◽  
Vol 28 (4A) ◽  
pp. A114-A119 ◽  
Author(s):  
E Koppensteiner ◽  
A Schuh ◽  
G Bauer ◽  
V Holy ◽  
G P Watson ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
X Ray ◽  
X Ray Scattering ◽  
Threading Dislocation Density ◽  
Ray Scattering

Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates

2006 ◽  
Vol 527-529 ◽  
pp. 1505-1508
Author(s):  
Ümit Özgür ◽  
Y. Fu ◽  
Cole W. Litton ◽  
Y.T. Moon ◽  
F. Yun ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Structural Quality ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Porous Network ◽  
X Ray ◽  
Radiative Efficiency ◽  
Decay Times ◽  
Threading Dislocation Density

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.

Study of Dislocation Densities of Thick GaN Films

2014 ◽  
Vol 989-994 ◽  
pp. 387-390
Author(s):  
Yon Gan Li ◽  
Xiang Qian Xiu ◽  
Xue Mei Hua ◽  
Shi Ying Zhang ◽  
Shi Pu Gu ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Screw Dislocation ◽  
Edge Dislocation ◽  
Thick Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Edge Dislocations

The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.

Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy

MRS Advances ◽  
2018 ◽  
Vol 3 (18) ◽  
pp. 931-936
Author(s):  
F. B. Abas ◽  
R. Fujita ◽  
S. Mouri ◽  
T. Araki ◽  
Y. Nanishi
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Dislocation Density ◽  
Hall Effect Measurement ◽  
Threading Dislocation ◽  
X Ray ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Order Of Magnitude

ABSTRACTThe objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.

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