Large-scale fabrication of field-effect transistors based on solution-grown organic single crystals

Correction for ‘Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors’ by Charles Mackin, et al., Analyst, 2016, 141, 2704–2711.

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Large-scale assembly of ‘type-switchable’ field effect transistors based on carbon nanotubes and nanoparticles

Nanotechnology ◽

10.1088/0957-4484/21/34/345301 ◽

2010 ◽

Vol 21 (34) ◽

pp. 345301 ◽

Cited By ~ 6

Author(s):

Sung Myung ◽

Sungjong Woo ◽

Jiwoon Im ◽

Hyungwoo Lee ◽

Yo-Sep Min ◽

...

Keyword(s):

Carbon Nanotubes ◽

Field Effect ◽

Large Scale ◽

Field Effect Transistors

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Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Nature Communications ◽

10.1038/s41467-019-13371-3 ◽

2019 ◽

Vol 10 (1) ◽

Cited By ~ 11

Author(s):

Monica Bollani ◽

Marco Salvalaglio ◽

Abdennacer Benali ◽

Mohammed Bouabdellaoui ◽

Meher Naffouti ◽

...

Keyword(s):

Field Effect ◽

Large Scale ◽

Field Effect Transistors ◽

State Of The Art ◽

Spontaneous Formation ◽

Surface Energy Anisotropy ◽

Energy Anisotropy ◽

On Chip ◽

Silicon Based ◽

Nano Wires

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

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ChemInform Abstract: Alignment and Patterning of Organic Single Crystals for Field-Effect Transistors

ChemInform ◽

10.1002/chin.201646282 ◽

2016 ◽

Vol 47 (46) ◽

Author(s):

Qin-Fen Li ◽

Shuang Liu ◽

Hong-Zheng Chen ◽

Han-Ying Li

Keyword(s):

Single Crystals ◽

Field Effect ◽

Field Effect Transistors

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Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2257793 ◽

2013 ◽

Vol 60 (6) ◽

pp. 1799-1806 ◽

Cited By ~ 25

Author(s):

Gennady I. Zebrev ◽

Alexander A. Tselykovskiy ◽

Daria K. Batmanova ◽

Evgeny V. Melnik

Keyword(s):

High Frequency ◽

Field Effect ◽

Large Scale ◽

Field Effect Transistors ◽

Small Signal ◽

Current Parameter

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An innovative large scale integration of silicon nanowire-based field effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2017.11.008 ◽

2018 ◽

Vol 143 ◽

pp. 97-102 ◽

Cited By ~ 13

Author(s):

M. Legallais ◽

T.T.T. Nguyen ◽

M. Mouis ◽

B. Salem ◽

E. Robin ◽

...

Keyword(s):

Field Effect ◽

Large Scale ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Large Scale Integration ◽

Scale Integration

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Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors

Frontiers in Chemistry ◽

10.3389/fchem.2021.698246 ◽

2021 ◽

Vol 9 ◽

Author(s):

Lijuan Zhang ◽

Xinzi Tian ◽

Yantao Sun ◽

Jiarong Yao ◽

Shuyuan Yang ◽

...

Keyword(s):

Field Effect ◽

Large Scale ◽

Near Infrared ◽

Field Effect Transistors ◽

Ambient Air ◽

Operational Stability ◽

Environmental Stability ◽

Organic Field Effect Transistors ◽

Major Barrier ◽

Visible Blind

Stability problem of organic semiconductors (OSCs) because of photoabsorption has become a major barrier to large scale applications in organic field-effect transistors (OFETs). It is imperative to design OSCs which are insensitive to visible and near-infrared (VNIR) light to obtain both environmental and operational stability. Herein, taking a 2,3,8,9-tetramethoxy [1,4]benzodithiino[2,3-b][1,4]benzodithiine (TTN2) as an example, we show that controlling molecular configuration is an effective strategy to tune the bandgaps of OSCs for visible-blind OFETs. TTN2 adopts an armchair-like configuration, which is different from the prevailing planar structure of common OSCs. Because of the large bandgap, TTN2 exhibits no photoabsorption in the VNIR region and OFETs based on TTN2 show high environmental stability. The devices worked well after being stored in ambient air, (i.e. in the presence of oxygen and water) and light for over two years. Moreover, the OFETs show no observable response to light irradiation from 405–1,020 nm, which is also favorable for high operational stability.

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