Large-scale assembly of ‘type-switchable’ field effect transistors based on carbon nanotubes and nanoparticles

2010 ◽  
Vol 21 (34) ◽  
pp. 345301 ◽  
Author(s):  
Sung Myung ◽  
Sungjong Woo ◽  
Jiwoon Im ◽  
Hyungwoo Lee ◽  
Yo-Sep Min ◽  
...  
2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wieland G. Reis ◽  
R. Thomas Weitz ◽  
Michel Kettner ◽  
Alexander Kraus ◽  
Matthias Georg Schwab ◽  
...  

Abstract The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.


2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.


2006 ◽  
Vol 45 (4B) ◽  
pp. 3680-3685 ◽  
Author(s):  
Bae-Horng Chen ◽  
Jeng-Hua Wei ◽  
Po-Yuan Lo ◽  
Zing-Way Pei ◽  
Tien-Sheng Chao ◽  
...  

The Analyst ◽  
2018 ◽  
Vol 143 (2) ◽  
pp. 580-580
Author(s):  
Charles Mackin ◽  
Tomás Palacios

Correction for ‘Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors’ by Charles Mackin, et al., Analyst, 2016, 141, 2704–2711.


Nano Research ◽  
2012 ◽  
Vol 5 (6) ◽  
pp. 388-394 ◽  
Author(s):  
Justin Wu ◽  
Liming Xie ◽  
Guosong Hong ◽  
Hong En Lim ◽  
Boanerges Thendie ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Monica Bollani ◽  
Marco Salvalaglio ◽  
Abdennacer Benali ◽  
Mohammed Bouabdellaoui ◽  
Meher Naffouti ◽  
...  

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.


2006 ◽  
Vol 938 ◽  
Author(s):  
Xiaolei Liu ◽  
Song Han ◽  
Daihua Zhang ◽  
Koungmin Ryu ◽  
Chongwu Zhou

ABSTRACTWe present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, large-scale integrated systems based on carbon nanotubes for both micro- and flexible electronics.


2013 ◽  
Vol 60 (6) ◽  
pp. 1799-1806 ◽  
Author(s):  
Gennady I. Zebrev ◽  
Alexander A. Tselykovskiy ◽  
Daria K. Batmanova ◽  
Evgeny V. Melnik

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