scholarly journals Recent progresses of quantum confinement in graphene quantum dots

2021 ◽  
Vol 17 (3) ◽  
Author(s):  
Si-Yu Li ◽  
Lin He
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Bound States ◽  
Berry Phase ◽  
Graphene Quantum Dots ◽  
Bound State ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Dirac Fermions ◽  
Tunneling Microscopy

AbstractGraphene quantum dots (GQDs) not only have potential applications on spin qubit, but also serve as essential platforms to study the fundamental properties of Dirac fermions, such as Klein tunneling and Berry phase. By now, the study of quantum confinement in GQDs still attract much attention in condensed matter physics. In this article, we review the experimental progresses on quantum confinement in GQDs mainly by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Here, the GQDs are divided into Klein GQDs, bound-state GQDs and edge-terminated GQDs according to their different confinement strength. Based on the realization of quasi-bound states in Klein GQDs, external perpendicular magnetic field is utilized as a manipulation approach to trigger and control the novel properties by tuning Berry phase and electron-electron (e-e) interaction. The tip-induced edge-free GQDs can serve as an intuitive mean to explore the broken symmetry states at nanoscale and single-electron accuracy, which are expected to be used in studying physical properties of different two-dimensional materials. Moreover, high-spin magnetic ground states are successfully introduced in edge-terminated GQDs by designing and synthesizing triangulene zigzag nanographenes.

Graphene Quantum Dots Probed by Scanning Tunneling Microscopy

2017 ◽  
Vol 529 (11) ◽  
pp. 1700018 ◽  
Author(s):  
Markus Morgenstern ◽  
Nils Freitag ◽  
Alexander Nent ◽  
Peter Nemes-Incze ◽  
Marcus Liebmann
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Graphene Quantum Dots ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

scholarly journals Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Raja S. R. Gajjela ◽  
Arthur L. Hendriks ◽  
James O. Douglas ◽  
Elisa M. Sala ◽  
Petr Steindl ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Flash Memory ◽  
Compositional Analysis ◽  
Structural Data ◽  
Scanning Tunneling ◽  
Valuable Insight ◽  
Material System ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Fe Simulations

AbstractWe investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

scholarly journals Imaging and identification of point defects in PtTe2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Kuanysh Zhussupbekov ◽  
Lida Ansari ◽  
John B. McManus ◽  
Ainur Zhussupbekova ◽  
Igor V. Shvets ◽  
...  
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Transition Metal Dichalcogenides ◽  
Density Functional Theory Calculations ◽  
Charge Carrier Mobility ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Recombination Rates ◽  
And Performance

AbstractThe properties and performance of two-dimensional (2D) materials can be greatly affected by point defects. PtTe2, a 2D material that belongs to the group 10 transition metal dichalcogenides, is a type-II Dirac semimetal, which has gained a lot of attention recently due to its potential for applications in catalysis, photonics, and spintronics. Here, we provide an experimental and theoretical investigation of point defects on and near the surface of PtTe2. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements, in combination with first-principle calculations, we identify and characterize five common surface and subsurface point defects. The influence of these defects on the electronic structure of PtTe2 is explored in detail through grid STS measurements and complementary density functional theory calculations. We believe these findings will be of significance to future efforts to engineer point defects in PtTe2, which is an interesting and enticing approach to tune the charge-carrier mobility and electron–hole recombination rates, as well as the site reactivity for catalysis.

scholarly journals Majorana zero modes in impurity-assisted vortex of LiFeAs superconductor

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lingyuan Kong ◽  
Lu Cao ◽  
Shiyu Zhu ◽  
Michał Papaj ◽  
Guangyang Dai ◽  
...  
Keyword(s):  
Quantum Computation ◽  
Zero Mode ◽  
Scanning Tunneling ◽  
Homogeneous Material ◽  
Dirac Fermions ◽  
Tunneling Microscopy ◽  
Zero Modes ◽  
Topological Quantum ◽  
One Step ◽  
Topological Quantum Computation

AbstractThe iron-based superconductor is emerging as a promising platform for Majorana zero mode, which can be used to implement topological quantum computation. One of the most significant advances of this platform is the appearance of large vortex level spacing that strongly protects Majorana zero mode from other low-lying quasiparticles. Despite the advantages in the context of physics research, the inhomogeneity of various aspects hampers the practical construction of topological qubits in the compounds studied so far. Here we show that the stoichiometric superconductor LiFeAs is a good candidate to overcome this obstacle. By using scanning tunneling microscopy, we discover that the Majorana zero modes, which are absent on the natural clean surface, can appear in vortices influenced by native impurities. Our detailed analysis reveals a new mechanism for the emergence of those Majorana zero modes, i.e. native tuning of bulk Dirac fermions. The discovery of Majorana zero modes in this homogeneous material, with a promise of tunability, offers an ideal material platform for manipulating and braiding Majorana zero modes, pushing one step forward towards topological quantum computation.

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